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  • 1
    Electronic Resource
    Electronic Resource
    Accurate determination of majority thermal-capture cross sections of deep impurities in p-n junctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2605-2612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for the direct determination of majority thermal-capture cross sections and concentration of deep levels in p-n junctions is proposed. The combined use of a capacitance technique and a numerical simulation (which reproduces the experimental details) provides accurate results through the fitting of experimental and numerical capture transients. The sensitivity of the method to these electrical magnitudes is also shown. This procedure is applicable not only to abrupt p+-n junctions, which have been quite thoroughly analyzed, but also to samples where a nonabrupt shallow-dopant profile together with a high concentration of deep levels makes them respond to a capture pulse in ways not reported until now. This method was used to analyze the two levels of platinum in silicon in nonabrupt p+-n junctions with a platinum concentration comparable to that of the shallow dopant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354673
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of the effects of constant-current Fowler–Nordheim-tunneling injection with charge trapping inside the potential barrier (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3712-3720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge trapping and the generation of interface traps in thermally grown SiO2 and its interface with silicon, produced by Fowler–Nordheim tunneling injection at low temperatures from highly doped Si substrates, have been investigated. The results that can be obtained with the constant-current-injection method, when a moderate amount of charge is trapped inside the potential barrier, have been analyzed. This has afforded information about the position of the charge trapped in the oxide. No increase in the interface-trap density has been produced immediately after injection at 77 K, but, as the temperature is raised after injection, the growing of a peak of interface states has been observed. This phenomenon had been reported to be produced as a consequence of a previous hole trapping but, in this case, this intermediate stage of positive-charge building has not been observed. This effect is discussed, taking into account published models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349222
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  • 3
    Electronic Resource
    Electronic Resource
    Evolution of electrical magnitudes in gradual p-n junctions with deep levels during the emission of majority carriers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4946-4953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A real (nonabrupt) p-n junction has been theoretically analyzed. It consists of a graded profile of shallow dopant atoms and a uniform profile of deep impurities, their relative concentrations varying along the structure (i.e., there are regions where deep impurity concentration is highest and others where dopant concentration dominates). This type of structure was excited by majority-carrier pulses, which allowed us to describe and explain new components in the charge distribution through the junction. The change in the interpretation of results from the application of capacitance techniques to these samples is quite remarkable. The validity of the theory is verified by comparison with experimental results obtained for silicon p-n junctions highly doped with platinum. The detailed analysis of the electrical model of a gradual junction with two deep levels, located in both halves of the band gap has allowed us to explain the following: (a) the disappearance of peaks in deep level transient spectroscopy (DLTS), (b) the existence of both positive and negative signals in a majority-DLTS spectrum, and (c) decreasing capacitance and voltage transients due to the emission of majority carriers or transients in which rising and falling sections are combined. The last two points cannot be explained by using the extended model of p+-n or n+-p junctions even if the deep-level concentration NT is assumed to be of the same order as the free carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352063
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of technological parameters on the behavior of the hole effective mass in SiGe structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1978-1982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of some features of a two-dimensional hole gas confined in a Si/Si1−xGex/Si/SiO2 structure when the external applied gate bias is varied. From the framework of the effective-mass theory, and applying the semiaxial approximation to separate the 6×6 Luttinger Hamiltonian into two 3×3 matrices, we calculated the hole density profile and the band structure. This enabled us to evaluate, in an iterative process, the Poisson and Schrödinger equations until convergence was achieved, obtaining the above-mentioned results for a discretional angle in the kx–ky plane, and thus including the warping. We identified in this way the influence of the different technological parameters which determine the behavior of the device, in particular, through the determination of a unique effective mass. We conclude that the utility of this kind of device lies more in the possibility of modifying the band structure due to the strain introduced than in the fact of being able to confine carriers in the Si1−xGex channel. Accurate calculation of the band structure is, therefore, needed and although simpler simulations can qualitatively model some features of the device, a complete study as described in this article must be carried out in order to obtain better insight into the physics of the system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1304839
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  • 5
    Electronic Resource
    Electronic Resource
    Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 438-444 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the main features of a two-dimensional hole gas confined near a Si–SiO2 heterointerface. Starting from the framework of the effective mass theory, we were able to separate the Luttinger Hamiltonian into two 3×3 matrices using a semiaxial approximation and still retaining the warped shape of the isoenergetic surfaces in the kx−ky plane and the coupling of heavy, light, and split-off holes. This allows us to solve iteratively and simultaneously the Schrödinger and Poisson equations in the case of an inversion layer of holes in a P-channel metal–oxide–semiconductor structure for different applied gate biases. We have obtained the energy subbands and the main characteristics of the inversion layer. The form of the energy subbands suggests that the use of parabolic bands should be seriously questioned, and that even the use of a unique effective mass in each subband is not a realistic assumption. Furthermore, our results show that the character of the subbands becomes mixed as k(parallel) separates from zero, and that the complete dispersion characteristics must be considered in hole studies. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370749
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  • 6
    Electronic Resource
    Electronic Resource
    A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1−xGex channel MOSFETs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5121-5128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electron-transport properties of strained-Si on relaxed Si1−xGex channel MOSFETs using a Monte Carlo simulator adapted to account for this new heterostructure. The low-longitudinal field as well as the steady- and nonsteady-state high-longitudinal field transport regimes have been described in depth to better understand the basic transport mechanisms that give rise to the performance enhancement experimentally observed. The different contributions of the conductivity-effective mass and the intervalley scattering rate reduction to the mobility enhancement as the Ge mole fraction rises have been discussed for several temperature, effective, and longitudinal-electric field conditions. Electron-velocity overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363493
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  • 7
    Electronic Resource
    Electronic Resource
    Comprehensive Monte Carlo simulation of the nonradiative carrier capture process by impurities in semiconductors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1998-2005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The main nonradiative capture mechanisms, cascade and multiphonon emission, have been numerically simulated by the Monte Carlo method. To do so, both mechanisms were included in the frame of a previous numerical procedure to which the nonacoustic-phonon contribution was also added. Different centers were studied. Capture by shallow donors (P, As, and Sb) in n-type silicon were interpreted considering only the cascade process. Capture by acceptors levels of platinum, gold, and titanium in silicon, and one level of Cr, EL2, and EL3 in gallium arsenide, were analyzed considering only multiphonon emission, and calculating the values of Huang–Rhys factor when it is not available. In the study of capture by attractive deep centers, such as single ionized donor centers of sulfur and selenium in silicon, both cascade and multiphonon mechanisms must be combined. In this case the importance of the nonacoustic phonon has been shown in the cascade process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358835
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  • 8
    Electronic Resource
    Electronic Resource
    Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6269-6275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inversion-layer mobility has been investigated in extremely thin silicon-on-insulator metal–oxide–semiconductor field-effect transistors with a silicon film thickness as low as 5 nm. The Poisson and Schrœdinger equations have been self-consistently solved to take into account inversion layer quantization. To evaluate the electron mobility, the Boltzmann transport equation has been solved by the Monte Carlo method, simultaneously taking into account phonon, surface-roughness, and Coulomb scattering. We show that the reduction of the silicon layer has several effects on the electron mobility: (i) a greater confinement of the electrons in the thin silicon film, which implies an increase in the phonon-scattering rate and therefore a mobility decrease; (ii) a reduction in the conduction effective mass and the intervalley-scattering rate due to the redistribution of carriers in the two subband ladders as a consequence of size quantization resulting in a mobility increase; and (iii) an increase in Coulomb scattering because of a greater number of interface traps in the buried Si–SiO2 and to a closer approach of these charged centers to the mobile carriers. The dependence of these effects on the silicon-layer thickness and on the inversion-charge concentration causes the mobility to be a nontrivial function of these variables. A detailed explanation of the mobility behavior is provided. Mobility for samples with silicon thickness below 10 nm is shown to increase in an electric field range that depends on the charged center concentration, while for silicon layers over 10 nm mobility always decreases as the silicon-layer thickness is reduced. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371684
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  • 9
    Electronic Resource
    Electronic Resource
    Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6854-6863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface roughness scattering on electron transport properties in extremely thin silicon-on-insulator inversion layers is carefully analyzed. It is shown that if the silicon layer is thin enough (thinner than 10 nm) the presence of the buried interface plays a very important role, both by modifying the surface roughness scattering rate due to the gate interface, and by itself providing a non-negligible scattering rate. The usual surface roughness scattering model in bulk silicon inversion layers is shown to overestimate the effect of the surface-roughness scattering due to the gate interface as a consequence of the minimal thickness of the silicon layer. In order to account for this effect, an improved model is provided. The proposed model allows the evaluation of the surface roughness scattering rate due to both the gate interface and the buried interface. Once the scattering rates are evaluated, electron mobility is calculated by the Monte Carlo method. The effect of the buried interface roughness on electron mobility is carefully analyzed by changing the height of the roughness. The effect of the silicon layer thickness on this scattering mechanism is also considered. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371763
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of the position of deep levels on generation-recombination noise (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3581-3583 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Power spectral density due to deep traps has been calculated in a junction field effect transistor (JFET) by a numerical procedure. Distribution of potential, density of carriers, and occupation factors were evaluated for any point of the structure. Different effects were found depending on the depth of the trap considered, such as spectra different from the pure Lorentzian shape or anomalous behavior of the noise amplitude with reverse voltage applied. The explanation of these effects may be useful for the characterization of midgap levels produced in JFETs under irradiation stress. Good agreement is achieved with the experiment. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115324
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