Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2940-2942
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-resolution transmission electron microscopy was used to examine the effect of laser irradiation of sapphire (single crystalline α-Al2O3). It was observed that laser-melted material resolidified as γ-Al2O3 epitactically grown on the (0001) plane of α-Al2O3 having an orientation relationship (0001)α//(111)γ and [011¯0]α//[11¯0]γ. The interface between unmelted α-Al2O3 and resolidified γ-Al2O3 is atomically flat with steps of one to a few close-packed oxygen layers. The high thermal gradient in the α-Al2O3 did not produce any interfacial dislocations. However, pronounced lattice distortions existed in the resolidified γ-Al2O3. It is argued that the very rapid cooling rate present during solidification prevents the ordering of Al atoms that is required for the formation of the stable α-Al2O3 phase. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112960
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