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  • 1
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    Overview of the negative ion based neutral beam injectors for ITER (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-10-10
    Description: The ITER baseline foresees 2 Heating Neutral Beams (HNB’s) based on 1 MeV 40 A D − negative ion accelerators, each capable of delivering 16.7 MW of deuterium atoms to the DT plasma, with an optional 3rd HNB injector foreseen as a possible upgrade. In addition, a dedicated diagnostic neutral beam will be injecting ≈22 A of H 0 at 100 keV as the probe beam for charge exchange recombination spectroscopy. The integration of the injectors into the ITER plant is nearly finished necessitating only refinements. A large number of components have passed the final design stage, manufacturing has started, and the essential test beds—for the prototype route chosen—will soon be ready to start.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Final design of the beam source for the MITICA injector (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-10-13
    Description: The megavolt ITER injector and concept advancement experiment is the prototype and the test bed of the ITER heating and current drive neutral beam injectors, currently in the final design phase, in view of the installation in Padova Research on Injector Megavolt Accelerated facility in Padova, Italy. The beam source is the key component of the system, as its goal is the generation of the 1 MeV accelerated beam of deuterium or hydrogen negative ions. This paper presents the highlights of the latest developments for the finalization of the MITICA beam source design, together with a description of the most recent analyses and R&D activities carried out in support of the design.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Evidence of RNAi in humans from systemically administered siRNA via targeted nanoparticles (2010)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2010-03-23
    Description: Therapeutics that are designed to engage RNA interference (RNAi) pathways have the potential to provide new, major ways of imparting therapy to patients. Long, double-stranded RNAs were first shown to mediate RNAi in Caenorhabditis elegans, and the potential use of RNAi for human therapy has been demonstrated by the finding that small interfering RNAs (siRNAs; approximately 21-base-pair double-stranded RNA) can elicit RNAi in mammalian cells without producing an interferon response. We are at present conducting the first in-human phase I clinical trial involving the systemic administration of siRNA to patients with solid cancers using a targeted, nanoparticle delivery system. Here we provide evidence of inducing an RNAi mechanism of action in a human from the delivered siRNA. Tumour biopsies from melanoma patients obtained after treatment show the presence of intracellularly localized nanoparticles in amounts that correlate with dose levels of the nanoparticles administered (this is, to our knowledge, a first for systemically delivered nanoparticles of any kind). Furthermore, a reduction was found in both the specific messenger RNA (M2 subunit of ribonucleotide reductase (RRM2)) and the protein (RRM2) levels when compared to pre-dosing tissue. Most notably, we detect the presence of an mRNA fragment that demonstrates that siRNA-mediated mRNA cleavage occurs specifically at the site predicted for an RNAi mechanism from a patient who received the highest dose of the nanoparticles. Together, these data demonstrate that siRNA administered systemically to a human can produce a specific gene inhibition (reduction in mRNA and protein) by an RNAi mechanism of action.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2855406/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2855406/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Davis, Mark E -- Zuckerman, Jonathan E -- Choi, Chung Hang J -- Seligson, David -- Tolcher, Anthony -- Alabi, Christopher A -- Yen, Yun -- Heidel, Jeremy D -- Ribas, Antoni -- CA U54 119347/CA/NCI NIH HHS/ -- U54 CA119347/CA/NCI NIH HHS/ -- U54 CA119347-04/CA/NCI NIH HHS/ -- England -- Nature. 2010 Apr 15;464(7291):1067-70. doi: 10.1038/nature08956. Epub 2010 Mar 21.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA. mdavis@cheme.caltech.edu〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/20305636" target="_blank"〉PubMed〈/a〉
    Keywords: Biopsy ; *Clinical Trials, Phase I as Topic ; *Drug Carriers/administration & dosage/pharmacokinetics ; Drug Delivery Systems ; Gene Knockdown Techniques/*methods ; Humans ; Injections, Intravenous ; Melanoma/drug therapy/enzymology/genetics ; *Nanoparticles/administration & dosage/analysis ; RNA Interference/*drug effects ; RNA, Messenger/analysis/genetics/metabolism ; RNA, Small Interfering/*administration & ; dosage/genetics/*pharmacology/therapeutic use ; Receptors, Transferrin/metabolism ; Ribonucleoside Diphosphate Reductase/biosynthesis/genetics
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Nature Publishing Group (NPG)
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of nucleation mechanism on planar defects in InAs on Si (100) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2931-2933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Suppression of three-dimensional (3D) island nucleation during growth of InAs on Si (100), achieved by using very low energy, high-flux Ar ion irradiation, reduced planar defect densities. For 13 eV ion irradiation, 3D islands nucleated after ∼2 monolayers (ML) of deposition, similar to conventional molecular beam epitaxy. High-resolution transmission electron microscopy studies of nominally 18-ML-thick films showed 3D InAs islands with {111} facets. A high density of {111} twins and stacking faults was observed adjacent to many of the {111} facets. Most of these defects propagated into the film upon further growth. When nucleation was carried out with 28 eV ion irradiation, flat InAs films were observed for thicknesses up to ∼10 ML. The 3D islands that nucleated at higher thicknesses were flatter with less faceting than in the 13 eV case. The density of planar defects in the initial nucleation layer and in thicker InAs films was reduced when 3D island nucleation was suppressed. These results indicate that planar defects formed directly on the {111} facets of the 3D islands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103734
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  • 5
    Electronic Resource
    Electronic Resource
    Nucleation and epitaxial growth of InAs on Si (100) by ion-assisted deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2319-2321 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation mechanism and crystalline perfection of InAs on Si(100) were found to depend strongly on the substrate bias voltage Vs used to accelerate Ar ions to the growing film during triode ion-assisted deposition. Increasing the Vs value used during the first ∼10 monolayers (ML) of growth from 15 to 30 V decreased the x-ray diffraction rocking curve full width at half maximum (FWHM) by a factor of ∼2. Further increases in Vs yielded an increase in the FWHM. Reflection high-energy electron diffraction studies showed that the use of Vs=30 V promoted layer-by-layer nucleation. While three-dimensional islands formed at a critical coverage θcr of 2 – 3 ML for Vs=15 V, increasing Vs to 30 V increased θcr to ∼10 ML. The fact that Vs=30 V both promoted layer-by-layer growth and decreased the FWHM suggests that defect generation is dependent upon the nucleation mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102049
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1992-1994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed the growth of epitaxial Al(111) films on Si(111) at room temperature by the partially ionized beam deposition technique. The films were deposited in a conventional vacuum condition without in situ cleaning. The beam contained 0.3% of Al self-ions and a bias potential of 1 kV was applied to the substrate during deposition. X-ray diffraction (pole figure) revealed that one of the two possible twin structures, with the Al〈1¯10〉(parallel)Si〈1¯10〉 orientation, was preferentially grown on the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98321
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  • 7
    Electronic Resource
    Electronic Resource
    Built-in voltages and asymmetric polarization switching in Pb(Zr,Ti)O3 thin film capacitors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3380-3382 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Asymmetric polarization switching of Pb(Zr,Ti)O3 (PZT) thin films with different electrode configuration has been studied in (La,Sr)CoO3/Pb(Zr,Ti)O3/(La,Sr)CoO3 (LSCO) heterostructures in which the conducting oxide (La,Sr)CoO3 and/or LaCoO3 (LCO) have been used as an electrode. Polarization-voltage (P-V) hysteresis loop of LSCO/PZT/LSCO was symmetric. However, LCO/PZT/LSCO showed a largely asymmetric P-V hysteresis loop and large relaxation of the remanent polarization at the negatively poled state, eventually leading to an imprint failure. On the other hand, LSCO/PZT/LCO exhibited large relaxation of the positively poled state. The asymmetric behavior of the polarized states implies the presence of an internal electric field inside the PZT layer. It is suggested that the internal electric field is caused by built-in voltages at LCO/PZT and LSCO/PZT interfaces. The built-in voltages at LCO/PZT and LSCO/PZT interfaces were 0.6 V and 0.12 V, respectively. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121610
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  • 8
    Electronic Resource
    Electronic Resource
    Kinetic studies of proton-exchange reactions between imidazole groups of small molecules and hydrogen phosphate ions in aqueous solution using ultrasonic relaxation (1991)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 4015-4019 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100163a025
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of a new Al(111)/Si(111) orientational epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 796-799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new Al(111)/Si(111) orientational epitaxy using x-ray pole figure analysis is reported. The new structure has a 19° rotation with respect to the parallel epitaxy. The results are explained using a geometrical lattice matching concept.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345734
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  • 10
    Electronic Resource
    Electronic Resource
    Morphology and crystalline perfection of InAs films on Si(100)
    Amsterdam : Elsevier
    Journal of Crystal Growth 137 (1994), S. 381-387 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)90974-1
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