ISSN:
1057-9257
Keywords:
LPE growth
;
Ga-Bi solution
;
‘purification effect’
;
photoluminescence
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature &helvbi;T&helvbd;=2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was analysed. © 1998 John Wiley & Sons, Ltd.
Additional Material:
3 Ill.
Type of Medium:
Electronic Resource
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