Electronic Resource
Springer
Journal of low temperature physics
30 (1978), S. 541-549
ISSN:
1573-7357
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Pure Cu and Cu(Fe) thin films containing ∼0.1 and ∼1.0 at % Fe were prepared by low-temperature deposition onto a liquid-helium-cooled substrate. The Cu(Fe) films were annealed sequentially at approximately 17, 70, and 270 K. After each annealing stage the resistivity was measured down to ∼1.5K. The Cu(Fe) films exhibited a region in which the resistivity was proportional to ln T; in this region the logarithmic slope of the resistivity curve was only weakly affected by annealing. Below ∼10 K annealing produced a significant decrease in the impurity (Fe) contribution to the resistivity. The results are interpreted as due to increased interactions between Fe atoms produced by an increase in conduction-electron mean free path.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00114969
Permalink
|
Location |
Call Number |
Expected |
Availability |