Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 3486-3488
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The current-voltage characteristic of a semiinsulating, monocrystalline ZnS film grown by metalorganic vapor-phase epitaxy is reported. High-field conduction is found to occur in the same field range (1.0–1.5 MV/cm) as in highly defected, electroluminescent material. It is concluded that the conduction mechanism underlying the operation of ZnS-based electroluminescent devices is bulk controlled. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115255
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