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  • 1
    Electronic Resource
    Electronic Resource
    Interstitial modification of rare-earth intermetallics : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6940-6942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interstitial modification of R2Fe17Zx is studied with R=Y, Sm, and Z=N, C, B, Si, and S. Equilibrium interstitial concentrations are calculated using a lattice gas model. For gas–solid reaction a low solubility is obtained at high temperatures, whereas a solid–solid reaction is predicted to yield R2Fe17Z1.5 in the high-temperature limit. Theoretical results are compared with data on Sm2Fe17Cx produced by solid–solid reaction at 500 °C. Volume expansions up to 4.8% were obtained, which corresponds to x(approximately-equal-to)2. The concentrations of interstitial boron and silicon are much lower.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352441
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray analysis of compositional modulation in Co/Pt multilayer films for magneto-optic recording (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 996-1000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional modulation in Co/Pt multilayer films was studied through the use of asymmetric Bragg diffraction. The angle between the scattering vector and the surface normal was varied in order to interrogate different components of the in-plane strain. In-plane strain values and unstrained lattice parameters, which reveal the intermixing of the two metals, were extracted from these measurements. The films displayed strains which varied with bilayer period and showed substantial intermixing at the smaller bilayer periods. These small bilayer period films showed perpendicular anisotropy as measured by Kerr rotation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354843
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  • 3
    Electronic Resource
    Electronic Resource
    Crystallographic anisotropy in thin film magnetic recording media analyzed with x-ray diffraction (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7591-7598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic anisotropy of CoCr alloy films deposited on a Cr underlayer was investigated with grazing incidence x-ray scattering (GIXS). The effect of circumferential mechanical texturing of the NiP substrate (producing microgrooves through polishing) was explored. The Co was found to grow heteroepitaxially on the Cr underlayer with the Co(112¯0) growth planes parallel to the Cr(001) growth planes. We observe no significant differences in Co lattice parameter in the circumferential and radial directions, although we do see variations in crystallographic texture between these two directions. From GIXS peak intensities, we observe that there is a greater population of crystallites with their c axis pointed along the grooves. This analysis was done after allowing for the effect of the varying local surface normal due to the substrate grooves. The ratio of the coercivities in the two directions scales with the ratios of the c-axis population densities. Two simple quantitative models of the magnetic properties of the aggregate have been constructed: strongly coupled grains and uncoupled grains. The predictions of these models are compared to the observed properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353979
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  • 4
    Electronic Resource
    Electronic Resource
    A suite of programs for calculating x-ray absorption, reflection, and diffraction performance for a variety of materials at arbitrary wavelengths : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 850-853 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: One of the most useful characteristics of synchrotron radiation is the wide spectral distribution of the source. For applications involving tuned monochromatic beams it is often helpful to predict the x-ray optical characteristics of a sample or the beam line optics at a particular wavelength. In contrast to this desire stands the fact that tabulated values for the optical parameters of interest are generally available only at wavelengths corresponding to typical x-ray tube sources. We have developed a suite of fortran programs which calculate photoabsorption cross sections and atomic scattering factors for materials of arbitrary, uniform composition or for arbitrary layered materials. Further, the suite includes programs for calculation of x-ray diffraction or reflection from such materials. These programs are of use for experimental planning, data analysis, and predictions of performance of beam line optical elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142625
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  • 5
    Electronic Resource
    Electronic Resource
    Silicon-induced faceting of vicinal GaAs(001) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3367-3376 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents in situ x-ray diffraction studies of the evolution of the morphology of 0.5°-miscut vicinal GaAs(001) surfaces during and following undoped and silicon-doped growth using organometallic vapor-phase epitaxy. Undoped growth leads to ordered monolayer steps. However, growth in the presence of silicon destabilizes this surface morphology and triggers faceting. Coarsening of the facet size proceeds even after the growth has stopped and results in large singular regions of GaAs(001) surface separated by step bunches. Dosing the surface with silicon without growing material does not trigger faceting. Growth of undoped GaAs on faceted surfaces recovers the initial state of ordered monolayer steps. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289482
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  • 6
    Electronic Resource
    Electronic Resource
    In situ x-ray measurements of the initial epitaxy of Fe(001) films on MgO(001) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4449-4455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small- and large-angle x-ray scattering from epitaxial Fe(001) on an MgO(001) surface has been measured as a function of film thickness, using grazing incidence x-ray scattering. Small-angle scattering shows that for Fe thicknesses less than 15 monolayers, the Fe is islanded with Fe[110](parallel)MgO[100]. For deposition at 360 °C, the Fe lattice parameter increases toward the MgO surface net spacing with increasing thickness in the 1–10 monolayer coverage regime, and then relaxes back toward the bulk Fe lattice parameter at greater thicknesses. Agglomeration of the islands results in changes in the Fe lattice parameter and in the high-angle peak widths. Prior to agglomeration, the measured in-plane lattice parameter versus thickness is described by a pairwise site interaction between the island and the substrate interface nets. Strain relaxation subsequent to agglomeration is described by continuum elasticity theory. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359853
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray analysis of GaAs surface reconstructions in H2 and N2 atmospheres (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2025-2027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we demonstrate the first in situ study of GaAs using grazing incidence x-ray scattering during processing at 100 Torr prior to epitaxial film growth. Our results indicate that the native oxide is removed and a well-ordered surface reconstruction is established at temperatures as low as 500 °C in hydrogen. In contrast, no surface reconstruction is observed when the substrate is heated in nitrogen at temperatures as high as 585 °C while comparable heating in hydrogen causes surface degradation in the form of liquid Ga droplets. These results suggest that a chemically induced surface transformation occurs rather than oxide evaporation during thermal treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103006
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  • 8
    Electronic Resource
    Electronic Resource
    Hg1−xCdxTe/Hg1−xZnxTe superlattices with constant Hg content (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1466-1468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hg1−xCdxTe/Hg1−xZnxTe superlattices with constant Hg content have been grown by molecular beam epitaxy for x between 0.22 and 0.4. Films grown at 180 °C show x-ray satellite peaks to the fourteenth order. An annealing study conducted between 185 and 225 °C shows enhanced stability compared to HgTe/CdTe superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101346
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  • 9
    Electronic Resource
    Electronic Resource
    A comparison of surface roughness as measured by atomic force microscopy and x-ray scattering (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2944-2953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare measurements of the roughness of silicon(001) wafers cleaned by several methods. The roughness values were obtained using crystal truncation rod (CTR) scattering and atomic force microscopy. Although they do not yield identical results, both methods show the same relative roughness for the different cleans. CTR scattering is sensitive to roughness on lateral length scales down to atomic dimensions. The quantitative differences in roughness can be explained by the different wavelength spectrum of roughness probed by the two techniques. CTR measurements were also performed after a 60 Å thermal oxide was grown on the wafers. The roughness trends are the same after oxidation, but we also find that the oxidation process has significantly reduced the interfacial roughness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366129
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  • 10
    Electronic Resource
    Electronic Resource
    Strain distribution in thin aluminum films using x-ray depth profiling (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 126-131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin polycrystalline Al films deposited on oxidized Si(100) substrates have been studied using grazing incidence x-ray scattering techniques. The films become strained after high-temperature annealing due to the differential thermal expansion of the substrate and film. By varying the grazing angle of incidence on the surface, the penetration depth of the incident x rays can be varied from a minimum of roughly 30 A(ring) to a maximum which is deeper than the film thickness. By measuring the change in the Al in-plane peak position with penetration depth, the strain distribution within the film can be determined. For thin films (less than 3000 A(ring)) the strain is uniform throughout much of the film, decreasing only very near the surface. Strain relaxation with time occurs uniformly throughout the film over the first 4000 min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340503
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