ISSN:
1432-0630
Keywords:
72.20 J
;
78.20 D
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Using picosecond laser pulses of a Nd∶YAG laser system we studied relaxation processes in high-excited monocrystalline silicon by transient reflectivity and transmittance. An experimental setup will be presented which is very sensitive to small refractive index changes. By different excitation radiations, i.e. different induced carrier distributions it is possible to separate the influence of different relaxation processes as surface and bulk recombination and diffusion on the simultaneously measured transient reflectivity and transmittance. The parameters of these relaxation processes were found by fitting the experimental results with computer calculations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617960
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