Publication Date:
2017-04-12
Description:
Author(s): J. Bousquet, T. Klein, M. Solana, L. Saminadayar, C. Marcenat, and E. Bustarret We report on a detailed study of the electronic properties of a series of boron-doped diamond epilayers with dopant concentration ranging from 1 × 10 20 to 3 × 10 21 cm − 3 and thicknesses ( d ⊥ ) ranging from 2 μ m to 8 nm. By using well-defined mesa patterns that minimize the parasitic currents induced by dopin… [Phys. Rev. B 95, 161301(R)] Published Mon Apr 10, 2017
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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