ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The influence of gg irradiation (60Co) of various intensities (P γ≈1.7−7.5kGR/h) on the photoluminescence of GaAs:Te single crystals [n 0=(1.2–2.3×1018 cm−3] is investigated. Together with the known photoluminescence impurity bands (hν max≈1.2 eV and/or hν max≈1.35 eV) and edge band (hν max≈1.51 eV), new bands are also observed in the spectra at hν max≈1.3 eV and hν max≈1.48 eV. The observed effects are attributed to radiation-stimulated ordering of the donor impurity and deep impurity centers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187355
Permalink