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  • 1
    Electronic Resource
    Electronic Resource
    Tokamak, reversed field pinch and intermediate structures as minimum-dissipative relaxed states (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 4801-4804 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The principle of minimum energy dissipation rate is utilized to develop a unified model for relaxation in toroidal discharges. The Euler–Lagrange equation for such relaxed states is solved in toroidal coordinates for an axisymmetric torus by expressing the solutions in terms of Chandrasekhar–Kendall (C–K) eigenfunctions analytically continued in the complex domain. The C–K eigenfunctions are hypergeometric functions that are solutions of the scalar Helmholtz equation in toroidal coordinates in the large-aspect-ratio approximation. Equilibria are constructed by assuming the total current J=0 at the edge. This yields the eigenvalues for a given aspect-ratio. The most novel feature of the present model is that solutions allow for tokamak, low-q as well as reversed field pinch-like behavior with a change in the eigenvalue characterizing the relaxed state. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324660
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of hydrogen dilution on the deposition rate of hydrogenerated amorphous silicon films in a modified pulsed plasma discharge (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 835-837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen dilution effects on the growth of a-Si:H films in a modified pulsed plasma discharge are studied for two different silane flow conditions with hydrogen dilution ranging from 0% to 80%. The increase of deposition rate (rd) due to hydrogen dilution is attributed mainly to changes in electron density (ne) and electron decay time constant (τe). Concurrently, it appears that hydrogen dilution mitigates the deleterious effects of secondary plasma reactions. Increasing the dwell time of the high power period under hydrogen dilution also increases rd, accompanied by an enhancement of photoconductivity (σph) as compared to films grown under similar conditions without dilution. The decrease in rd at dilution (approximately-greater-than)25% is seen as the onset of a process of etching, presumably by atomic hydrogen, and this limits rd irrespective of the availability of the number of silane molecules at such dilutions. Time-resolved optical emission spectroscopy results for H* emission supports the above views. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116549
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  • 3
    Electronic Resource
    Electronic Resource
    Possible solution to the problem of high built-up stresses in diamond-like carbon films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3866-3876 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The various issues relating to the nature of high built-up stresses in diamond like carbon (DLC) films are presented and analyzed and the utility of pulse plasma technique in growing low residual stress DLC films is emphasized. Subsequently, sufficiently thick (2.2 μm) and hard (2000 kg/mm2) DLC films of significantly low stress ((approximate)0.1 GPa) were deposited by the pulse plasma enhanced chemical vapor deposition (PECVD) technique. Stress values were found to be less than 0.5 GPa even with wide variation in pulse parameters (power density 0.4–2.0 W/cm2, dwell time 10–150 ms and duty cycle 10%–70%). A possible growth mechanism operating during pulse plasma discharge of such low residual stress and hard DLC films appears to involve the three phenomena: (i) relaxation of adions/adatoms, (ii) control of the substrate temperature, and (iii) creation of a hard/soft multilayer structure. To examine the role of substrate heating during the pulse plasma discharge, films were also deposited on deliberately heated substrates, using pulse plasma discharge, by using methane, acetylene, and benzene as hydrocarbon sources. An observation of direct correlation of the residual stresses and the degree of order of the film network has been made. Nitrogen dilution of the feedstock was also investigated, and further stress reduction has been observed, but not to the extent that occurs in continuous wave (cw) discharge grown films. This may be because constituent atoms in the film already approach close to a critical coordination number set by the fully constrained network (FCN) model. Other film properties like optical band gap (Eg), refractive index, and room temperature electrical conductivity (σRT) have also been estimated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369758
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogenated amorphous silicon films prepared in cascaded glow discharge reactors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1578-1586 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma decomposition of silane by glow discharge in cascade reactors, which we proposed earlier, yields highly resistive a-Si:H films with appreciable photoconductivity in the second reactor of the cascade. These films have since been characterized by transmission and scanning electron microscopy, Auger electron spectroscopy, infrared spectroscopy as well as by measuring conductivity, photoconductivity, thermoelectric power, optical gap, light-induced changes in conductivity (Staebler–Wronski effect) and density of gap states to see in what respect these two types of films differ. These investigations show that, deposition parameters remaining the same in the two reactors, the films obtained from the first reactor are in no way different from what other workers have reported. The films prepared in the second reactor of the cascade, however, have (i) low dark conductivity (10−13–10−12Ω−1 cm−1), (ii) higher activation energy (0.95–1.05 eV), (iii) higher photosensitivity, (iv) higher optical gap (2.0–2.1 eV), (v) less density of states in the gap, and (vi) are less prone to Staebler–Wronski effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336467
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of pulse parameters on the deposition rate of hydrogenated amorphous silicon in a modified pulsed plasma discharge (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 85-87 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films were deposited from 100% silane and disilane gases by a pulsed radio-frequency plasma chemical vapor deposition method in which a nonzero low power level was maintained. The pulse parameters were varied to study their effect on the deposition rate. It was found that the deposition rate depends both on the high power level and the dwell time. For a given high power level, the deposition rate is less than that of a continuous wave discharge up to a certain dwell time and increases beyond this value in both silane and disilane discharges. Onset of powder formation was observed beyond this crossover point. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114154
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  • 6
    Electronic Resource
    Electronic Resource
    Diamond-like carbon films grown by very high frequency (100 MHz) plasma enhanced chemical vapor deposition technique (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 49-51 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond-like carbon films were grown by VHF-PECVD technique. Since the self-bias potential developed in a VHF plasma is very low, sufficiently high negative dc voltage was applied to the substrates in order to make DLC film being grown reasonably hard. Also a comparative study of VHF grown films was made with rf (13.56 MHz) discharge grown films (grown in the same PECVD reactor). This made it possible to investigate the specific effects of excitation fre- quency while keeping other parameters constant. Deposition rate (rd) was found to be about 5 times higher for VHF grown films. Marginal variation in optical band gap (Eg) and refractive index (n) were observed in VHF grown films with variation in deposition parameters. Maximum value of hardness recorded was 1500 kg/mm2 in the case of rf and 902 kg/mm2 in the case of VHF grown films, within the range of deposition parameters. Stress values were in the range 1.7×109−2.9×109 Nm−2 for VHF and 3.6×109−4.6×109 Nm−2 for rf grown films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118114
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  • 7
    Electronic Resource
    Electronic Resource
    Optoelectronic properties of hydrogenated amorphous silicon films grown using a modified pulsed plasma discharge (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 194-196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon (a-Si:H) films were deposited by a modified pulsed plasma decomposition of silane and disilane in which a nonzero low power level was maintained throughout the discharge. Deposition rate (rd), optical band gap (Eg), dark and photoconductivity (σD and σph), and photosensitivity (σph/σD) were investigated as a function of pulse parameters. By combining dwell time (τ) and the high power level (HPL) it has been shown that Eg can be tailored over a fairly wide range. Similarly, σD and σph/σD have been shown to depend, in addition to HPL, on τ as well, thereby proving the possibility of using τ as an additional process parameter. High band-gap a-Si:H material of quality (σph=4.4×10−6 Ω−1 cm−1, σph/σD≈105) comparable to that of device quality a-Si:C:H has been deposited by this technique. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116457
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  • 8
    Electronic Resource
    Electronic Resource
    Spectroscopic investigation on the molecular and electronic structure of [Mo"3S"1"3]^2^-, a discrete binary transition metal sulfur cluster
    Amsterdam : Elsevier
    Inorganica Chimica Acta 41 (1980), S. 259-263 
    Details
    ISSN: 0020-1693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0020-1693(00)88466-2
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  • 9
    Electronic Resource
    Electronic Resource
    Infrared studies of hard hydrogenated amorphous carbon (aC:H) film and the effect of argon plasma treatment
    Amsterdam : Elsevier
    Infrared Physics and Technology 35 (1994), S. 617-624 
    Details
    ISSN: 1350-4495
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1350-4495(94)90027-2
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  • 10
    Electronic Resource
    Electronic Resource
    Stability of the free vibrational motion of a vehicular body supported by rubber shear mountings with quadratic response
    Amsterdam : Elsevier
    International Journal of Non-Linear Mechanics 24 (1989), S. 401-414 
    Details
    ISSN: 0020-7462
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0020-7462(89)90027-9
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