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  • 1
    Electronic Resource
    Electronic Resource
    Second-harmonic generation in nonbirefringent semiconductor optical microcavities (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6042-6045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the second-harmonic generation process in a microcavity of optical nonlinear material. We show that, in the case when the cavity thickness is much smaller than the material coherence length and for sufficiently high finesses, no phase match procedures are necessary to obtain a quite large optical conversion yield. It is thus possible to capitalize on the large optical nonlinear susceptibilities of III-V or II-VI materials though these compounds are not birefringent. It is shown that by adjusting mirror reflectivity phases it is possible to obtain doubly resonant cavities in which there is no phase mismatch between pump and harmonic waves. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360543
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of a third order mode optically pumped semiconductor laser structure (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1262-1267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconductor lasers with third order waveguide mode emission are a promising way in which to achieve microsources of twin photons. The transport of electrons and holes in these particular structures is a critical issue. The temperature and pumping energy dependence of the photoluminescence spectra of a semiconductor structure specially designed for third order mode emission at 775 nm is studied. The analyses show that transfer of carriers from satellite double heterojunctions to the quantum well through a 140 nm Al0.50Ga0.50As barrier is very efficient, and the population inversion required for lasing is always obtained first in the quantum well rather than in the double heterojunctions at both low and room temperature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1489093
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  • 3
    Electronic Resource
    Electronic Resource
    Photonic band gaps and holography (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 60-64 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photonic band gap materials are holograms with extremely high refractive index contrasts. The refractive index function can be approximated by a small number of plane waves, as a consequence of the photonic crystal periodicity. Photonic crystals can hence be constructed with a simple holographic recording of a very small number of optical plane waves, and appear in this regard as the simplest holograms. Various photonic band gap structures are theoretically analysed and those concepts are illustrated experimentally with the fabrication of a two-dimensional triangular lattice in GaAs. The extension of the method to the three-dimensional diamond structure is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365849
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  • 4
    Electronic Resource
    Electronic Resource
    Electric field induced interband second harmonic generation in GaAs/AlGaAs quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3765-3767 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the second order optical susceptibility χ(2) of symmetric GaAs/AlGaAs quantum wells under applied bias, in the frequency region near half the band gap. The second harmonic is generated in a transmission geometry, and is separated from bulk contribution by a lock-in detection technique. As opposed to previous reports, we find that χxzx(2) is much higher than χzxx(2). For 50 A(ring) quantum wells, χxzx(2)≈25 pm/V and χzxx(2)≈0 at λ=1.66 μm under an applied electric field E=50 kV/cm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115376
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  • 5
    Electronic Resource
    Electronic Resource
    Finite-element Maxwell's equations modeling of etched air/dielectric Bragg mirrors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5300-5304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The importance of diffraction losses in etched air/GaAs Bragg mirrors in waveguides is theoretically evaluated. A complete three-dimensional resolution of the Maxwell equations by a finite element method is performed, and shows the great importance of diffraction into the substrate. Two cases are distinguished: the weak guiding case, where the index contrast between waveguide and substrate is low (example: GaAs/AlAs), and the strong guiding case where this contrast is high, thanks to the use of lower refractive index substrates, such as oxidized AlAs. The latter solution is found to be very promising since the diffraction losses into the substrate are practically eliminated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366295
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  • 6
    Electronic Resource
    Electronic Resource
    Parametric fluorescence in oxidized aluminum gallium arsenide waveguides (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3758-3760 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Parametric fluorescence in low-loss oxidized aluminum gallium arsenide heterostructure waveguides is quantitatively analyzed. A parametric fluorescence efficiency as high as 6×10−7 W/W has been measured in a 3.2-mm-long waveguide. This corresponds to a normalized conversion efficiency, scaled with the waveguide length, of about 1000% cm−2 W−1, eight times higher than with LiNbO3 waveguides. This opens the perspective of a microoptical parametric oscillation threshold below 100 mW. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424063
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  • 7
    Electronic Resource
    Electronic Resource
    Huge birefringence in selectively oxidized GaAs/AlAs optical waveguides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1320-1322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective wet oxidation of AlAs was used to obtain huge birefringence in GaAs/AlAs optical waveguides. A single polarization waveguide was obtained by oxidizing an AlAs layer buried in a GaAs guiding layer. The TM mode is below cutoff due to the high index contrast between the layers. Applications to phase matching in nonlinear optical conversion are envisaged. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115921
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  • 8
    Electronic Resource
    Electronic Resource
    Grating coupled infrared modulator at normal incidence based on intersubband transitions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1569-1571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An infrared modulator based on intersubband transitions in GaAs/AlGaAs quantum wells and working at normal incidence has been fabricated. The coupling is provided by a diffraction grating and the modulation is observed in the nondiffracted order transmitted by the modulator. Modulation depths are increased by a factor of 3 compared to the same structure used without grating at Brewster angle. The results are in excellent agreement with our calculations of near field diffraction in an anisotropic quantum well region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118619
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  • 9
    Electronic Resource
    Electronic Resource
    Phase-matched mid-infrared difference frequency generation in GaAs-based waveguides (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3622-3624 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate difference frequency generation of 4 μm radiation from 1 to 1.32 μm pumps in GaAs-based waveguides. Phase matching is obtained by using form birefringence in selectively oxidized AlGaAs/AlAs multilayers. A tunability over 50 cm−1 around 4 μm is demonstrated by changing the waveguide temperature and one pump wavelength. A much larger tunability may be achieved by using two tunable sources. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120460
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  • 10
    Electronic Resource
    Electronic Resource
    Δn=0.22 birefringence measurement by surface emitting second harmonic generation in selectively oxidized GaAs/AlAs optical waveguides (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2587-2589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the birefringence enhancement due to lateral selective oxidation of AlAs in GaAs/AlAs optical waveguides. The birefringence was measured by imaging the surface-emitted second harmonic generated by the nonlinear interaction of counterpropagating TE and TM modes. In a waveguide containing a single AlAs layer the birefringence is enhanced from Δn=0.017 (before oxidation) to Δn=0.038 (after oxidation). In an oxidized multilayer GaAs/AlAs waveguide, a birefringence as high as Δn=0.22 is measured. This birefringence is sufficient to phase-match the difference frequency generation of 3–5 μm infrared radiation from two near-infrared pumps. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119336
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