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  • 1
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    Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors (1984)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics (ISSN 0021-8979); 56; 2964-297
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Theoretical values of various parameters in the Gummel-Poon model of a bipolar junction transistor (1986)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: Various parameters in the Gummel-Poon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. A consistent theoretical approach is used which facilitates an understanding of the foundations and limitations of the derived formulas. The results enable one to predict how changes in the geometry and composition of a transistor would affect performance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Journal of Applied Physics (ISSN 0021-8979); 59; 636-644
    Format: text
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    NASA TECHNICAL REPORTS
  • 3
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    Modeling "Soft" Errors in Bipolar Integrated Circuits (1985)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Mathematical models represent single-event upset in bipolar memory chips. Physics of single-event upset in integrated circuits discussed in theoretical paper. Pair of companion reports present mathematical models to predict critical charges for producing single-event upset in bipolar randomaccess memory (RAM) chips.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: NPO-16375 , NPO-16384 , NPO-16293 , NASA Tech Briefs (ISSN 0145-319X); 9; 2; P. 54
    Format: text
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    NASA TECHNICAL REPORTS
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