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MOSFET and MOS capacitor responses to ionizing radiation (1984)

Boesch, H. E., Jr. ; Benedetto, J. M.

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Publication Date: 2011-08-19

Description: The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING

Type: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-31; 1461-146

Format: text

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