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  • 1
    Electronic Resource
    Electronic Resource
    X-ray diffuse scattering of p-type porous silicon (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2742-2752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray diffuse scattering investigation of p-type porous silicon (PS) is reported. Synchrotron radiation and laboratory measurements of the x-ray diffuse scattering at small and large scattering wave-vector q values are presented. At small q values and for p−-type material, small isotropic crystallites of a few nanometers diameter are shown, whereas for p+-type material the main cylindrical crystallites are larger. At large q values the fine p+ PS structure is investigated and reveals the presence of small spherical crystallites around the main cylindrical crystallites. The elastic relaxation of silicon crystallites in the porous structure is also presented for oxidized and for as-formed samples, using reciprocal space maps. PS superlattice diffuse scattering is then observed. Finally, these results are discussed in relation to previous x-ray studies and other methods of structural observation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429791
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray diffraction investigation of the low temperature thermal expansion of porous silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2131-2136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high resolution x-ray diffraction, the porous silicon lattice parameter was measured in vacuum, as a function of temperature in the range 90–300 K, showing that the thermal expansion of porous silicon is larger than that of bulk silicon. We then estimate the differential thermal expansion coefficient δα of p+-type porous silicon samples of various porosity (from 60% to 80%). Between 90 and 250 K, δα is constant as a function of the temperature but increases linearly with the sample porosity. The porous silicon thermal expansion is related to the temperature variation of the silicon nanocrystallite surface stress. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372151
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  • 3
    Electronic Resource
    Electronic Resource
    Nanoindentation investigation of the Young's modulus of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3772-3776 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Young's modulus of porous silicon samples, with porosity ranging from 36% to 90%, is measured by the nanoindentation technique. The analysis of the nanoindentation data, including the specific problem linked with porous materials, is presented. The Young's modulus values Ep thus obtained appear to be drastically dependent on the porosity and on the doping level (p or p+ type). The dependence of Ep versus the relative density (for a series of p+ type samples) is quadratic, in good agreement with the model of Gibson and Ashby developed for cellular materials. This also shows that highly porous silicon layers exhibit very low Young's modulus (for a porosity of 90% it is about two orders of magnitude smaller than that of the nonporous material). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363305
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray-diffraction investigation of the anodic oxidation of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8060-8070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of porous silicon anodic oxidation is reported. We have studied the evolution of the lattice parameter versus oxidation levels for p- and p+-type materials by using high-resolution x-ray diffraction, which gives a determination of the strains of the porous layer. The analysis of an asymmetric reflection enables us to measure the lattice parameter parallel to the surface. Moreover a diffuse scattering, observed at the bottom of the Bragg peaks, comes from the porous structure. The study of this diffuse scattering with reciprocal space maps gives information about the pore size and shape. It is shown that the evolution of the lattice mismatch parameter is related to the surface stress variations. After a review of previous works on porous silicon strains and on surface stresses of silicon we discuss the origin of the strains of as-formed and oxidized porous silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362360
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  • 5
    Electronic Resource
    Electronic Resource
    Study of the cracking of highly porous p+ type silicon during drying (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7586-7591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of the cracking of highly porous silicon layers during drying is investigated. Optical and scanning electron microscopy observation allow us to observe the cracking occurrence. In situ x-ray diffraction experiments, under controlled vapor pressure of pentane, reveal that large capillary stresses occur at a vapor pressure P* during the controlled drying. These stresses lead to the cracking of the highly porous layer, which occurs for samples thicker than a critical thickness hc. Taking into account the mechanical properties of the material, a model based on energy balance is presented. This model predicts a layer thickness hc of cracking occurrence, showing that hc varies as (1−p)3/γLV2 (where γLV is the surface tension of the drying liquid and p is the porosity). This model is in good agreement with experimental data obtained with two liquids, water, and pentane, which have very different surface tension and also for two different porosities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362415
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  • 6
    Electronic Resource
    Electronic Resource
    Thin layers and multilayers of porous silicon: X-ray diffraction investigation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5814-5822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon is a unique example of a porous material exhibiting the properties of a nearly perfect single crystal. High resolution x-ray diffraction has been used to investigate thin p− and p+ type porous silicon layers in the 100–1000-nm-thickness range. Since several thickness fringes are observed, the comparison between experimental results and simulations enables one to deduce information about the main structural parameters such as porosity, lattice parameter, thickness, and heterotransition width. Porous silicon multilayers have also been investigated: some satellites are clearly observed. The obtained results are then compared and discussed with the literature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367438
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  • 7
    Electronic Resource
    Electronic Resource
    Diffuse x-ray scattering from p+ porous silicon by triple axis diffractometry (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain and microstructure of porous silicon on (001) wafers with different porosity were investigated by triple axis x-ray diffractometry using an instrumental resolution of 12 arcsec. The Bragg diffraction peaks arising from the porous Si contain information both on the mean strain (1.29–2.95×10−3) and on strain gradients (0.70–1.42×10−3) in these samples. In specimens with a porosity of 60% the pores are shown to be elongated over about 200 nm along the [001] direction, and over 50 nm in directions parallel to the growth plane. It is demonstrated that the correlation function for the pores has an extension along the [001] direction which is about a factor of 4 larger than along the [010] direction. From measurements of the intensity distribution of diffuse x-ray scattering a crystallographical damage in the silicon skeleton can be excluded. Regions of the porous layer near the interface to air are shown to be tensilely strained both along and perpendicular to the substrate normal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112026
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  • 8
    Electronic Resource
    Electronic Resource
    Cloning and Sequencing of the Equine Testicular Follitropin Receptor
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 201 (1994), S. 201-207 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/bbrc.1994.1689
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of a cleavage product in the human choriogonadotropin β-subunit
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 154 (1988), S. 626-632 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(88)90185-4
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  • 10
    Electronic Resource
    Electronic Resource
    Expression of the Human Follicle-Stimulating Hormone Receptor in the Baculovirus System
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 196 (1993), S. 402-408 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/bbrc.1993.2263
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