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  • 1
    Electronic Resource
    Electronic Resource
    Raman study under resonant conditions of defects near the interface in a GaAs/Si heterostructure (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4777-4781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Raman study has been performed, under resonant conditions, on a GaAs bevelled-edge layer grown on a Si substrate to characterize the optical and crystalline properties of the epilayer near the interface. According to the geometrical characteristics of the sample, a theoretical expression for the Raman intensities profile has been established and compared to the experimental data. This fitting procedure enables us to investigate the absorption coefficient of the GaAs layer due to the disorder-induced softening of the E1 edge. A quantitative analysis of the lattice disorder has been carried out on both longitudinal and transverse optical modes by studying the Raman line-shape evolution versus the laser spot position on the bevel edge. From this study, we have followed the recovery of the crystalline quality of the epilayer while going away from the interface, and evaluated the "Raman thickness'' of the dislocated layer. Using the spatial correlation model as a relationship between the disorder amount and the outcoming effects on the Raman line peaks, we have estimated the dislocation density at the heterostructure interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346133
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  • 2
    Electronic Resource
    Electronic Resource
    Polar phonon-intersubband plasmon coupling in Si delta-doped GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1072-1078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present work is devoted to Raman scattering by coupled phonon-intersubband plasmon excitations in Si δ-doped GaAs. The signature of the coupled modes is pointed out by means of difference Raman scattering, and their symmetry determined according to the selection rules. A good agreement is found between the experimental spectra and those calculated in the frame of the dielectric response theory. Raman depth profiling measurements have been performed for two locations of the Si-doped sheet with respect to the sample surface. These results give evidence for electron localization in the vicinity of the doped sheet and allow the spatial extent of the electron gas to be estimated. The change undergone by the Raman signal of the coupled phonon-plasmon system is studied as a function of doping level, and the ion spreading effects are discussed. The measurements performed in a wide range of temperature are also presented and analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354954
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  • 3
    Electronic Resource
    Electronic Resource
    Raman study of longitudinal optical phonon-plasmon coupling and disorder effects in heavily Be-doped GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4064-4070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy measurements have been performed on GaAs:Be samples with high crystalline quality and exceptional heavy doping level ranging from 1019 to 1.4×1021 cm−3. The recorded spectra show a structure we assigned to a coupled LO phonon-damped plasmon mode. A theoretical expression for the Raman scattering rate by this mode has been derived from a dielectric model and compared to the experimental data. Using a fitting procedure the doping level of the samples has been estimated in agreement with Hall measurements. Moreover, the study of the Raman intensity evolution of both unscreened-LO and coupled phonon-plasmon structures, provided a convenient and rapid method to determine the activated carrier density in p-doped polar semiconductors. Disorder effects due to the dopant impurities have been also observed and analyzed using a spatial correlation model description.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348957
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  • 4
    Electronic Resource
    Electronic Resource
    On the mode of growth of CaF2 and (Ca,Sr)F2 on GaAs and Si(111) substrates (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2076-2078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The early stages of molecular-beam epitaxy of (Ca,Sr)F2 and CaF2 on GaAs and Si(111) substrates have been studied by means of in situ Auger electron spectrometry and reflection high-energy electron diffraction. The results obtained show (i) that the growth proceeds in all cases via a two-dimensional mechanism that preserves the atomic flatness of the growth front and (ii) that this growth has a nonpseudomorphic character. This behavior is related to the properties of the fluorides involved. The general trends in fluoride-semiconductor heterostructure growth are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342500
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  • 5
    Electronic Resource
    Electronic Resource
    Si-substrate preparation for GaAs/Si molecular-beam epitaxy at low temperature under a Si flux (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 246-248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for preparing Si substrates in molecular-beam epitaxy (MBE) systems devoted to III–V compound growth is described. A C- and O-free Si surface is obtained on previously oxidized substrates using a HF solution etch. A (2×1) reconstructed surface with steps of monoatomic height is achieved with an atomic Si flux provided by a standard effusion cell, while the substrate is maintained at 600 °C for ∼10 min. The experimental results presented were obtained using Auger electron spectrometry and reflection high-energy electron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341472
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1980-1984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First- and second-order Raman scattering by Zn-implanted InP is investigated in order to determine critical fluences needed for a complete disturbance of the lattice and recovery temperature during thermal annealing. Disorder-activated first-order acoustical scattering and second-order optical scattering are shown to be highly sensitive probes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337199
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy and optical characterization of GaAs on CaF2 substrates (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 208-212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of GaAs layers on bulk fluoride substrates is reported. The characteristics of the GaAs layers are studied by Raman and photoluminescence spectroscopies. The experimental results presented compare these GaAs layers to those grown on (Ca,Sr)F2/GaAs. It is shown that the crystalline quality of GaAs improves with the distance to the fluoride interface and that the layers are under compressive stress; in addition, it was found that the latter does not affect the photoluminescence efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337683
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  • 8
    Electronic Resource
    Electronic Resource
    Two-dimensional-like nucleation of GaAs on Si by room-temperature deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2372-2374 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nucleation of GaAs on Si in molecular-beam epitaxy is studied by Auger electron spectrometry and reflection high-energy electron diffraction. It is shown that, if growth is initiated at room temperature and if a GaAs equivalent thickness of ∼15 A(ring) is deposited on Si, an amorphous, nonstoichiometric layer is obtained which covers completely the substrate surface. Stoichiometry and monocrystallinity can be restored by thermal annealing at 350 °C by a solid-phase epitaxy mechanism. Under such conditions the initial stages of GaAs/Si growth can then proceed via two-dimensional nucleation, instead of the three-dimensional mode observed at higher growth temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341668
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  • 9
    Electronic Resource
    Electronic Resource
    Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1025-1031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupling) likely to modify the scattering efficiency. Calculations are performed in order to obtain quantitative evaluations of the misoriented volume amount.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337392
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  • 10
    Electronic Resource
    Electronic Resource
    Raman study of electron confinement in Si δ-doped GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2848-2850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter Raman spectroscopy measurements on Si δ-doped GaAs are reported. The coupling of two-dimensional (2D) intersubband plasmons with the polar phonons is clearly demonstrated. The change undergone by the coupled mode signal as a function of the depth explored by the Raman probe is studied and allows for an original and accurate investigation of electron gas confinement. Indeed, it is shown that a quantitative analysis of depth profiling measurements allows the real-space extent of the quasi-2D electron gas in δ-doped structures to be estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109230
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