ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hall-effect and photoluminescence measurements have been carried out on Sn-doped CuGaSe2 single crystals. The doping was performed either during chemical vapor transport growth with iodine or by a diffusion step at temperatures between 200 and 400 °C. Room temperature resistivity can be varied in the range between 10−2 and 106 Ω cm. Hall-effect data can be explained using a model containing two acceptor levels, one of which is very shallow, and a donor level. Due to doping the concentration of the first acceptor, whose activation energy is 59 meV, is decreased and the donor concentration is increased, but no n-type conductivity was observed. The photoluminescence spectra can be explained by an acceptor level of 50 meV, two donor levels of 80 and 110 meV, respectively, and a deep state of 400 meV. VCu, VSe, VSe complexes, and Sn on cation lattice sites are suggested as origins of these states. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361460
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