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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1826-1831 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed an extensive series of measurements on symmetrical barrier bound-to-continuum and asymmetrical barrier bound-to-bound quantum well infrared photodetectors consisting of only a single well. We find that the behavior of the optical (e.g., responsivity) and transport properties (e.g., gain) as a function of bias is strikingly different from that of the usual multi-quantum well detectors. The simplicity of the structure has allowed an accurate theoretical calculation of the potential drops across each barrier, the photoinduced carrier depletion in the quantum well and therefore a detailed understanding of the device physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 346-350 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extensive series of measurements and theoretical analysis are presented on an undoped single-quantum-well infrared photodetector. The well is filled by electron tunneling through the thin emitter barrier resulting in several novel characteristics compared with the usual directly well-doped detectors. These include a unity optical gain and a dramatic drop in the well carrier density (and responsivity) at high bias when the bound state in the well drops below the emitter conduction-band edge.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4344-4348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral degrees of freedom in resonant tunneling heterostructure devices are investigated in a model which omits the usual assumption that the electric field and current density are laterally uniform. Relaxation of spatially nonuniform configurations of field and current into the usual uniform configurations is examined. For certain device parameters and operating conditions, stable nonuniform configurations are found in addition to the conventional uniform configurations. An eigenvalue criterion for stability is established. The possibility of nonuniform configurations with spatially localized oscillation is also discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 503-505 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first successful demonstration of long-wavelength infrared (LWIR) detection with a Kastalsky-type AlGaAs/GaAs superlattice structure is reported. The experimental response band of the detector is centered near 10 μm in very good agreement with the theoretical response band provided that electron-electron interactions are taken into account. The detector operates at significantly lower bias voltage than photoconductive multiple quantum well LWIR detectors. This could lead to important advantages in applications to photovoltaic detector arrays. The response at 83 K is about 50% of the response at 24 K. Optimization of the response, operating temperature, or bias voltage has not been carried out.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 34-36 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bistability in well known circuits employing devices with nonlinear current-voltage characteristics is shown to be a classical concept which can be modified by quantum mechanical effects. The classically stable states "0'' and "1'' are shown to correspond to a single stable quantum mechanical state and a metastable state. Bit error rates associated with metastable state lifetimes are estimated for circuits employing quantum well devices and found to be appreciable in the mesoscopic regime (feature sizes (approximately-less-than)0.2 μm).
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2115-2117 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The issue of intrinsic bistability in resonant tunneling devices is examined analytically and quantitatively. The results indicate that the putative argument for intrinsic bistability is actually an argument for intrinsic tristability. If a third stable configuration really exists, it might be hard to access experimentally although its existence could have consequences for high-speed device applications. If an intrinsic bistable regime is ipso facto a tristable regime, then an experimental search for a third stable configuration could provide persuasive evidence for the physical mechanism commonly advocated as the basis for intrinsic bistability.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1931-1933 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that exchange interactions in the two-dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies. In the case of doped quantum wells, the intrasubband exchange interaction can produce an energy shift which is substantially larger than the direct Coulomb energy shift. Theoretical estimates of such shifts are compared with experimental measurements of the infrared photoconductivity of multiple quantum well AlGaAs/GaAs structures with wells doped at about 1018 cm−3.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1865-1867 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Hartree–Fock approach [Z. Physik 61, 126 (1930)] is used to analyze electron-electron interactions in heterostructures. The analysis includes estimates of the effect of electron-electron interactions on localized states in quantum wells and resonant tunneling. Resonant tunneling is treated in a self-consistent narrow resonance approximation. The Hartree–Fock approach yields an explicit exchange interaction subband energy shift which is completely omitted in Poisson equation treatments. Exchange effects are found to be of the same order of magnitude but opposite in sign to direct interactions at typical electron densities.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1679-1681 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared excitation energies between the ground-state subband and the first excited-state subband in quantum wells are analyzed including the effect of exchange interactions on the ground-state subband. Analytic and numerical calculations relevant to infrared absorption and infrared detection are performed. Previous work on exchange interaction effects in narrow wells is extended to deal with well widths which can provide absorption peaks and photocurrent peaks throughout the long-wavelength infrared and very-long-wavelength infrared regime. Exchange effects are shown to be substantial.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 961-963 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments have been carried out to demonstrate and study the interfacing of silicon sensors to silicon devices which represent first stage elements of an artificial neural network. Sensor outputs (network inputs) are photocurrents associated with infrared, visible, or ultraviolet light. First stage linear coding of input current into the pulse rate of a stereotypical neuronlike spiketrain output has been achieved with a dynamic range of more than 106. For 1 pA inputs, the estimated noise referred to input is 10 fA. Network elements are shown to obey equations of the same form as equations which occur in nonlinear neural network models recently analyzed by Hopfield [Proc. Natl. Acad. Sci. 81, 3088 (1984)] and previously studied by Sejnowski [J. Math. Biology 4, 303 (1977)].
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