ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Transmission electron microscopy has been employed to study as-received, annealed, zinc-diffused and copper-diffused silicon-doped GaAs. The results on the as-received material show that the defect structure is dependent on the silicon doping level, with small perfect and faulted loops being present at high doping levels. The results of the annealing study on heavily doped material show that the size and density of the loop structure is strongly dependent on the temperature and type of loop. This behaviour has been interpreted in terms of previous work on the variation of the point-defect populations and free-carrier concentration with annealing temperature. The effect of zinc diffusion on the defect structure of heavily Si-doped GaAs has been found to be very similar to that observed after equivalent diffusions into Te-doped GaAs and is explained with reference to these results. The differences between the two cases are thought to be mainly due to the amphoteric nature of silicon in GaAs. The diffusion of copper has been found to result in large increases in the perfect and faulted loop areas. This, it is suggested, is due to the mechanism of copper diffusion in GaAs and the effect on point-defect populations of in-diffusing a p-type dopant into n-type material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00591476
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