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  • 1
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 5807-5811 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Collisional removal rate constants for the OH(X 2Π, v=9) radical are measured for the colliders O2, CO2, and N2O and upper limits are established for He, H2, Ar, and N2. OH(v=6) molecules, generated in a microwave discharge flow cell by the reaction of hydrogen atoms with ozone, are excited to v=9 by the output of a pulsed infrared laser via direct vibrational overtone excitation. The temporal evolution of the v=9 population is probed as a function of the collider gas partial pressure by a time-delayed pulsed ultraviolet laser. The probe laser light is resonant with the B 2Σ+–X 2Π(0,9) transition and the resulting visible B 2Σ+–A 2Σ+ fluorescence is detected with a filtered photomultiplier tube. We measure rate constants for N2O: (6.4±1.0)×10−11; CO2: (5.7±0.6)×10−11; O2: (1.7±1.1)×10−11; H2: 〈3×10−12; He: 〈2×10−12; N2: 〈5×10−13; Ar: 〈2×10−13 (all in units of cm3 s−1). For O2 and CO2 these rate constants are significantly faster than those for low vibrational levels and comparable to those for v=12.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3832-3836 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report field emission microscopy images from single walled carbon nanotubes showing resolvable fine structure with five- and six-fold symmetry. We present evidence indicating that these images have atomic resolution and that they depict the electronic structure of individual nanotube caps under high-field conditions. Fine structure is observed only after removal of surface adsorbates. Prior to adsorbate removal, these images show symmetrical lobed patterns and several other behaviors characteristic of chemisorbed resonant tunneling states. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6141-6146 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An important issue in field emission vacuum microelectronics is the stability of the field emitters with the residual ambient gas. Particularly important is that the field emitter tips made of refractory metals like molybdenum, niobium and tungsten are susceptible to oxidation. The corresponding metal oxides are insulating and adversely affect the emission current characteristic by increasing the width of the effective tunneling barrier. With this perspective, we studied iridium oxide field emitters to evaluate the characteristics of conductive oxide tips. We studied the field emission characteristics of iridium and thermally prepared iridium oxide field emitters using field emission microscopy and current–voltage measurements. We found that, upon oxidation, the voltage required to achieve the desired emission current desire dropped significantly. In addition, oxidation led to a decrease of emission current fluctuations. The development of stable conductive oxide field emitters should improve the performance of field emitter tips, especially under adverse vacuum conditions. © 2002 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 320-321 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile analytical system based on thermal desorption spectroscopy of thin films is presented. We have found the apparatus to be a useful tool for measuring the desorption characteristics of trapped gases in physical vapor deposited thin films and in determining the thermal stability of multi-component thin film compounds and multilayer structures. The system was also found to be a convenient tool for determining outgassing properties of thin film and thick film materials for vacuum microelectronic device applications. © 2000 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3889-3891 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present an improved liquid crystal microthermography technique for the detection of defects in large area field emission cathode arrays. Defects can cause electrical leakage paths, leading to localized heating at the defect location. The thermal gradients at these hot spots can be detected by liquid crystal microthermography, but, the direct placement of the liquid crystal is a two step process. First the liquid crystal is deposited by spin coating the device and the liquid crystal has to be removed from the device after the test. This process, apart from being time consuming, can lead to contamination of the test device. In this article, we present an improved liquid crystal microthermography technique for the detection of hot spots in field emitter arrays. The improvement is obtained by hermetically sealing the liquid crystal material inside a packaged assembly made from a glass support and a thin plastic membrane. We have used the new method for the detection of hot spots in large area field emission cathode arrays. This technique provides accurate detection of hot spot locations caused by leakage currents as low as 100 μA.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4755-4759 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple-energy H-, He-, and B-ion bombardments were performed to obtain uniform high resistivity over the entire thickness of p-type In0.53Ga0.47As. High resistivity, 580 Ω cm, which is close to the intrinsic resistivity limit of ≈103 Ω cm in InGaAs, is observed. The thermal stability of the high-resistance layers depended upon the mass of the implanted ion. The B-ion-implanted layers maintained high resistivity up to ≈200 °C. Photoluminesence measurements were used to obtain the energy of compensating levels produced by light-ion bombardment.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1394-1396 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal growth conditions on the morphology and surface work function of iridium oxide thin films grown by annealing Ir thin films in an O2 ambient is presented. The samples were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and photoelectric work function measurements. It is found that, with increasing temperature, IrO2 changes from (110) oriented to a mixture of (110) and (200) during the oxide growth. This is manifested as a sharpening of the photoelectric energy distributions at 800 °C. The surface work function was determined to be 4.23 eV using ultraviolet photoelectron spectroscopy. X-ray photoelectron spectroscopy analysis shows that IrO2 starts to form at 600 °C accompanied by surface roughening. Annealing the Ir film at 900 °C in O2 ambient leads to almost complete desorption of the film. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3017-3019 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate long-term field emission stability from single-walled carbon nanotubes. Unballasted nanotubes operate without degradation for over 350 h at 10−9 Torr. Nanotubes are shown to be significantly less sensitive to operating environments than metallic emitters. In 10−7 Torr of H2O, we demonstrate 100 h of continuous bias field emission with no current degradation. Protrusion growth and current runaway, typical problems for unballasted metal emitters, are not observed with nanotubes. Single-walled nanotubes do show susceptibility to damage by oxidation. We suggest that the exceptional environmental stability of carbon nanotubes is due to a combination of geometry, strong carbon bonding, and the lack of protrusion growth. © 1999 American Institute of Physics.
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  • 10
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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