Publication Date:
2016-11-18
Description:
The chip temperature influence on the hydrogen sensitivity of the metal-insulator- semiconductor field-effect transistor (MISFET) with structure Pd-Ta 2 O 5 -SiO 2 -Si was investigated. MISFET sensing element was integrated on silicon chip together with ( p-n )- junction temperature sensor and heater-resistor. There were measured the hydrogen responses of the MISFET threshold voltage for room and higher chip temperatures. The threshold voltage V T as a function of hydrogen concentration C was determined for different temperatures T . The models of hydrogen and temperature sensitivities based on the experimental dependencies of V T ( C, T ) are presented in this work.
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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