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  • 1
    Electronic Resource
    Electronic Resource
    Annealing-induced effects on the stability of hydrogenated amorphous silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5959-5964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed isothermal annealing on a hydrogenated amorphous silicon (a-Si:H) sample deposited at low temperature in a glow discharge reactor. In order to change the hydrogen bonding configuration without affecting the silicon structure we choose a relatively low annealing temperature. We studied the dependence on the annealing time of the dark conductivity, photoconductivity, light-induced degradation of the photoconductivity, optical gap, vibrational spectra, and subgap defect density. As the annealing time increased we found an increase in the dark conductivity activation energy. This shift of the dark Fermi level toward the valence band was correlated with the growth of a peak in the density of states below midgap. From the vibrational spectra we obtained the microstructure parameter, which is indicative of the amount of hydrogen bonded as polihydrides and/or to some sort of internal surface. We used the bond-breaking model to fit photoconductivity decay as a function of illumination time, and we found a correlation between the Staebler–Wronski susceptibility and the microstructure parameter. This would mean that the stability of the material concerning light-induced degradation is related to the way hydrogen is attached in the amorphous network. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360598
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  • 2
    Electronic Resource
    Electronic Resource
    Direct evidence of porosity in carbon-rich hydrogenated amorphous silicon carbide films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4544-4546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption spectroscopy was used to study the oxidation of hydrogenated amorphous silicon carbide (a-Si:C:H) films prepared by the glow-discharge decomposition of gaseous mixtures of silane and methane. It has been found that carbon-rich samples incorporate oxygen when exposed to air, as detected by an increased absorption of the Si-O-Si stretching vibration band. The analysis of the infrared spectra of samples annealed in air at room temperature and at 200 °C indicates that, except for their oxidation rate, no appreciable difference exists in the mechanisms of oxygen incorporation in the films at the two temperatures. The oxidation kinetics suggests an open porous structure for these carbon-rich films. On the contrary, samples having a low carbon content appear to oxidize on the surface only, in a way similar to amorphous silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343926
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  • 3
    Electronic Resource
    Electronic Resource
    The first stages of oxidation of a-Si studied with Auger electron spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1054-1058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the first stages of low-pressure oxidation of amorphous silicon using Auger electron spectroscopy. The application of the principal component analysis to the Si L2,3 core-valence-valence transition spectra, acquired during the oxidation, allows us for the interpretation of the oxidation kinetics of the a-Si. Using the target transformation method we have isolated the Auger spectra of the components present during the oxidation process. We observe an intermediate state in the Si-SiO2 interface formed during the oxidation. This state was attributed to a SiOx-type compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339763
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  • 4
    Electronic Resource
    Electronic Resource
    Infrared study of the kinetics of oxidation in porous amorphous silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1802-1807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared spectroscopy has been applied to the study of the kinetics of oxidation in high-pressure dc-sputtered amorphous silicon. The different spectra obtained during the evolution of the oxidation are processed by factor analysis. Two oxidation mechanisms have been found. Their associated infrared spectra and time evolution can be explained by a model that proposes the existence of a two-level microstructure. The spectra associated with each one of the oxidation mechanisms seems to correspond mainly to SiO2, modified by the presence of surface modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337223
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  • 5
    Electronic Resource
    Electronic Resource
    Reply to "Comment on ‘Infrared study of the Si-H stretching band in a-SiC:H' '' [J. Appl. Phys. 69, 7805 (1991)] (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4092-4093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the theoretical arguments used in the preceding comment do not apply to our experiments, and that our interpretation of the behavior of the Si-H stretching band in a-SiC:H in terms of structural influences is correct.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350838
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "Infrared study of the Si—H stretching band in a-SiC:H'' [J. Appl. Phys. 69, 7805 (1991)] (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 545-545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351409
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  • 7
    Electronic Resource
    Electronic Resource
    Infrared study of the Si-H stretching band in a-SiC:H (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7805-7811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon carbide (a-Si1−xCx:H) samples having x ≤ 0.4 were studied by infrared and visible spectroscopy. Treatment by factor analysis of the 2000–2100 cm−1 absorption band of the spectra allows us to interpret this particular vibrational mode in terms of only two independent contributions. The analysis shows that polarization inductive shifting is not significant. An IR study of the evolution of this band during oxidation of porous samples was also performed. All the experimental evidence indicates that the growth of free volumes induced by the presence of carbon plays the most important role in the behavior of the 2000–2100 cm−1 band upon stoichiometric variations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347509
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  • 8
    Electronic Resource
    Electronic Resource
    The role of surface in sputtered amorphous silicon: An oxidation study (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4251-4255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High porosity amorphous silicon samples were produced by dc-sputtering in high argon pressure. Post-deposition oxidation and correlated effects were studied in order to elucidate the surface contribution to the measured properties. Infrared spectroscopy, used to follow the oxygen concentration during the oxidation process, allows us to detect the way in which the oxygen is attached. The electron spin density, absorption edge, and dark conductivity are measured in correlation with the oxygen content. We conclude that, for this material, dangling bonds are preferentially located near the inner surface of the porous structure. It is suggested that band bending is responsible for conductivity enhancement and two alternative mechanisms are proposed to explain the absorption edge shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335560
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  • 9
    Electronic Resource
    Electronic Resource
    Photobromination of liquid 3-methylpentane (1976)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 80 (1976), S. 2629-2634 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100565a002
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of the light-induced degradation on the extended state mobility in hydrogenated amorphous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4047-4049 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the effects of light soaking on the extended state electron mobility in intrinsic and n-type doped hydrogenated amorphous silicon samples. We obtained the temperature dependence of the mobility in the range 0–80 °C, using a recently proposed method [Dawson et al., Appl. Phys. Lett. 63, 955 (1993)]. We found a decrease of the mobility as the degree of light-induced degradation increased. We suggest that these changes in the extended state transport are caused by an enhancement in the magnitude of the potential fluctuations introduced by the extra created charged defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117866
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