Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 3398-3403
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
This work deals with the study of boron nitride (BN) thin films deposited onto silicon substrates using the ion beam-assisted pulsed laser deposition method. Influence of experimental deposition parameters on the percentage of sp3 chemical bonds (representative of the cubic BN phase) contained in the deposited film and on chemical composition is presented. The best percentages of sp3 bonds, up to 80%, are obtained under bombardment by a pure nitrogen ion beam, and we do not observe any significant contribution of argon ions in the bombarding ion beam to the presence of sp3 bonds in the deposited films. X-ray photoelectron spectroscopy and atomic force microscopy performed on various BN films reveal important changes with the type of chemical bonds (sp2 and sp3) contained within these films. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367107
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