ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The development of low-resistance Ohmic metallizations to p-type 6H–SiC, using a focused ion-beam (FIB)-Ga surface-modification and ex situ pulsed laser (PLD) epitaxial TiN deposition without further annealing, is reported. The FIB-Ga surface-modification and PLD epitaxial TiN metallizations showed a minimum value of contact resistance of 4.4×10−5 Ω cm2 at an ion dose and energy of 5.0×1016 ions/cm2 and 20 keV, respectively. Auger analysis data indicated well-defined interfaces between the metal and the semiconductor, and a significant subsurface Ga concentration. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122802
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