ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract In this paper the photoluminescence (PL) of holmium-doped silicon is discussed. The silicon was first implanted with holmium ions at energies of 1–2 MeV and doses of 1×1013–3×1014 cm−2, and then annealed at temperatures of 620–900 °C for 0.5–1 h. In order to increase the concentration of electrically and optically active centers, the silicon was implanted a second time with oxygen ions at energies of 0.14–0.29 MeV and doses of 1×1014–3×1015 cm−2. Several photoluminescence lines, which are attributable to the transitions of electrons from the first excited state of the Ho3+ ion (5 I 7) to the ground state (5 I 8), were observed. The amplitudes of the most intense lines, which correspond to transitions at frequencies 5119 and 5103 cm−1, decreased by more than an order of magnitude in the temperature range 4.2−78 K. The PL intensity of the holmium ions increased with increasing concentrations of the implanted rare-earth ions and oxygen.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187703
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