Publication Date:
2011-08-27
Description:
Author(s): M. Fasoli, A. Vedda, M. Nikl, C. Jiang, B. P. Uberuaga, D. A. Andersson, K. J. McClellan, and C. R. Stanek We employ a combination of first-principles calculations and optical characterization experiments to explain the mechanism by which Ga 3+ doping prevents the trapping of free carriers due to shallow traps in RE 3 Al 5 O 12 garnet scintillators (where RE represents a 3+ rare-earth cation). Specifically, we... [Phys. Rev. B 84, 081102] Published Fri Aug 26, 2011
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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