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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1800-1810 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multichannel spectroscopic ellipsometer based on the rotating-compensator principle was developed and applied to measure the time evolution of spectra (1.5–4.0 eV) in the normalized Stokes vector of the light beam reflected from the surface of a growing film. With this instrument, a time resolution of 32 ms for full spectra is possible. Several advantages of the rotating-compensator multichannel ellipsometer design over the simpler rotating-polarizer design are demonstrated here. These include the ability to: (i) determine the sign of the p-s wave phase-shift difference Δ, (ii) obtain accurate Δ values for low ellipticity polarization states, and (iii) deduce spectra in the degree of polarization of the light beam reflected from the sample. We have demonstrated the use of the latter spectra to characterize instrument errors such as stray light inside the spectrograph attached to the multichannel detector. The degree of polarization of the reflected beam has also been applied to characterize the time evolution of light scattering during the nucleation of thin film diamond by plasma-enhanced chemical vapor deposition, as well as the time evolution of thickness nonuniformities over the probed area of the growing diamond film. In this article, a detailed description of calibration and data reduction for the new instrument is provided. Future applications of this instrument are expected for real time characterization of film growth and etching on patterned surfaces for microelectronics and on thick transparent substrates for large area displays and photovoltaics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3842-3848 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Submonolayer sensitivity to thin-film nucleation and growth in real time on the millisecond scale has been achieved with a unique rotating polarizer multichannel ellipsometer. Continuous spectra in the ellipsometry angles {ψ(hv),Δ(hv)} consisting of ∼50 points from hv=1.5 to 4.3 eV have been obtained with acquisition and repetition times as short as 16 and 32 ms, respectively. As an example of the instrument capabilities, we present results for hydrogenated amorphous silicon (a-Si:H) growth on c-Si by plasma-enhanced chemical vapor deposition at a rate of 400 A(ring)/min. In this example, the acquisition and repetition times are both 64 ms, and at this speed a precision in (ψ,Δ) of ∼0.02–0.03° is obtained under optimum conditions. We observe a-Si:H nucleation in the first 2 s of deposition, and detect relaxation of nucleation-induced surface roughness with submonolayer sensitivity.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recently developed technique of real time spectroscopic ellipsometry (SE) has been applied to characterize the nucleation of diamond on c-Si by W filament-assisted chemical vapor deposition, leading to improved control over the process. Specifically, techniques are developed which minimize W contamination at the diamond/substrate interface; calibrations are performed which determine the temperature of the top ∼250 A(ring) of the substrate under growth conditions; and alterations in gas flow conditions are implemented in response to diamond growth for a reduced induction time. With these procedures in place, real time SE provides the induction time, nucleation density, and mass thickness, and is in quantitative agreement with ex situ scanning electron microscopy.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3489-3500 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An expansion of the capabilities of high-speed, multichannel spectroscopic ellipsometry (SE) is described that involves simultaneous measurement of the reflectance spectrum along with the two spectra in the ellipsometric angles (ψ, Δ). Previously, a novel rotating-polarizer spectroscopic ellipsometer has been perfected that employs a photodiode array detector for high-speed acquisition of (ψ, Δ) spectra, designed for real-time studies of thin-film growth. For a polarizer angular rotation frequency of ω0, the (ψ, Δ) values at a given photon energy are deduced from the 2ω0 Fourier components of the detector irradiance, normalized by the dc component. A third parameter, the weighted reflectance RA, can be obtained from the dc component and from a calibration based on the known optical properties of the substrate measured prior to film growth. With (ω0/2π)=12.5 Hz, three-parameter data sets, [ψ(hν), Δ(hν), RA(hν); 1.5≤hν≤4.5 eV], can be acquired with a time resolution as short as 40 ms. Although RA provides complementary information to (ψ, Δ), it has yet to be exploited in conjunction with real-time SE until this study. A resilient analysis approach, based on mathematical inversion and least-squares fitting of the real-time three-parameter data sets, is designed to yield the film dielectric functions and thicknesses independently at each time during the early stages of thin-film growth. The three-parameter approach has been applied successfully in studies of amorphous silicon (a-Si:H) thin films prepared by plasma-enhanced chemical vapor deposition, and aluminum and silver films prepared by physical vapor deposition. For the a-Si:H films, RA(hν) exhibits deviations as large as ∼3% from that predicted in modeling (ψ, Δ) alone. The deviations result from light scattering by plasma particulates, and we show how additional information can be extracted from the spectral dependence of the scattering loss.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 900-902 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multichannel spectroscopic ellipsometer based on the rotating-compensator principle has been applied to obtain the evolution of spectra (1.5–4.0 eV) in the normalized Stokes vector of the light beam reflected from the surface of a nanocrystalline diamond film during growth. Spectra in the ellipsometry angles (ψ, Δ) provide the time evolution of the microstructure and optical properties of the film in thin layers, whereas the spectra in the degree of polarization provide the time evolution of nonuniformities in the growth process attributed to light scattering by diamond nuclei in the initial stage of growth and to thickness gradients over the probed area in thicker layers. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3317-3319 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using real time spectroellipsometry (SE), we have studied the interfacial interactions that occur when i- and p-type hydrogenated amorphous silicon-carbon alloys (a-Si1−xCx:H) are deposited from hydride-containing plasmas onto transparent, conducting films of ZnO. The SE spectra collected during the nucleation of a-Si1−xCx:H onto ZnO reveal a widening of the near-interface optical gap of ZnO by ∼0.1 eV, an effect attributed to the penetration of atomic H from the plasma. The SE data, along with ex situ secondary ion mass spectrometry, reveal that the H diffuses into ZnO to depths (approximately-greater-than)200 A(ring). The defects that result from H incorporation in ZnO (e.g., O vacancies) lead to a shift in the near-interface Fermi level higher into the ZnO conduction band and to an estimated enhancement in the electron concentration by ∼1020 cm−3.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2543-2545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed techniques to determine the near-infrared to near-ultraviolet dielectric function and optical gap of ultrathin amorphous silicon [a-Si:(H)] using real-time spectroscopic ellipsometry during preparation and processing. The techniques have been applied to ∼50 A(ring) a-Si:H films prepared by plasma-enhanced chemical vapor deposition, and to ∼250 A(ring) pure a-Si chemically modified by atomic H exposure. For the latter, the time evolution of the bonded H content can be estimated along with the evolution of the gap.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etching of hydrogenated amorphous silicon (a-Si:H) in thermally generated atomic hydrogen has been investigated in detail, utilizing real time spectroellipsometry for characterization and end-point detection. When properly controlled, etching can yield ultrathin microcrystalline Si (μc-Si:H) films of relatively high density on virtually any substrate material. These films are unique in that their microstructure is established by the crystallization of the near-surface a-Si:H, rather than by the nucleation of crystallites on the substrate, as occurs for plasma-enhanced chemical vapor-deposited μc-Si:H films. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2228-2230 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural evolution of hydrogenated amorphous silicon-carbon (a-Si1−xCx:H) alloy thin films with optical gaps of ∼1.95 eV has been characterized by real time spectroscopic ellipsometry versus hydrogen dilution of the reactive gases (CH4+SiH4) used in plasma-enhanced chemical vapor deposition. As the H2/(CH4+SiH4) flow ratio is increased to 24, the monolayer-scale features of nucleation and growth suggest an enhancement in the diffusion length of the film precursors on the substrate and film surfaces, leading to an increase in the surface structural stability and bond-packing density of the final material. We suggest a causal connection between the monolayer-scale processes and the ultimate photoelectronic properties of the a-Si1−xCx:H, which also improve with H2 dilution over the same range.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1904-1911 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A unique rapid-scanning ellipsometer employing a rotating polarizer optical configuration and a multichannel detector for a 1.5–4.5 eV spectral range, has been developed recently for real time studies of film growth and surfaces. This is a new application of the photodiode array-based optical multichannel detector that entails waveform analysis of the incident irradiance at each photon energy. For accurate ellipsometric spectra {ψ(hν),Δ(hν)}, the raw data in the form of photon counts, integrated over four or more equal sectors of polarizer rotation, must be corrected for systematic errors originating from the detection system. Simple procedures are described to characterize and correct for the most significant errors including detection system nonlinearity, image persistence, and scattered stray light in the spectrograph/detector enclosure.
    Type of Medium: Electronic Resource
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