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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characteristics of two Coulomb blockade devices driven by a periodically oscillating potential (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1350-1356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the electrical characteristics of two multiple tunnel junction Coulomb blockade devices connected in series and separated by an island, which is large enough for Coulomb blockade phenomena in the island to be neglected. A sine wave rf signal applied to this island results in a current, which switches its polarity depending on the magnitude and sign of the gate voltages applied to the multiple tunnel junctions, even if the source drain voltage across the entire circuit is nonzero. We show that the transport mechanism responsible for this current is strongly related to the Coulomb blockade characteristics of the multiple tunnel junctions, which need to be asymmetric to achieve pump operation. The circuit characteristic can be explained theoretically by a bidirectional electron pump, which is therefore inherently different from conventional electron pumps driven by multiple ac signals. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1382850
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  • 2
    Electronic Resource
    Electronic Resource
    A high-speed silicon-based few-electron memory with metal– oxide–semiconductor field-effect transistor gain element (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8594-8603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The design and operation of a single-electron transistor-controlled memory cell with gain provided by an integrated metal–oxide–semiconductor field-effect transistor is described. The field-effect transistor has a split gate, the central section of which is addressed by the single-electron transistor. This design effectively reduces the size of the cell's memory node such that the memory states are represented by a difference of only a few hundred electrons, while obtaining output currents in the microamp range. The hysteresis loop in the field-effect transistor current shows clear step discontinuities which arise from Coulomb oscillations in the single-electron transistor's drain-to-source current. The cell operates with write times as short as 10 ns and voltages of less than 5 V at 4.2 K, and operation persists to 45 K. The cell design is compact and the memory is fabricated in silicon-on-insulator material by processes that are compatible with current silicon fabrication methods. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373584
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication of high aspect ratio silicon pillars of 〈10 nm diameter (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1116-1118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of high aspect ratio, sub-10 nm size, structures in silicon without involving any wet chemical etching. A 50 nm thick double layer of low and high molecular weight polymethylmethacrylate resist was exposed with an 80 kV electron beam of diameter smaller than 5 nm. After exposure the resist was developed in 3:7 cellusolve: methanol with ultrasonic agitation during development. A 5 nm thick AuPd film was deposited by ionized beam evaporation and a metal pattern was obtained by liftoff. Sub-10 nm AuPd dots were recorded with a scanning electron microscope. The AuPd pattern was then used as a mask on the Si substrate which was etched with reactive ion etching. Silicon nanocolumns with diameters ranging from 5 to 7 nm and an aspect ratio of height to diameter of about 7:1 were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109798
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resist (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1499-1501 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present limit of around 10 nm for the width of lines fabricated by e-beam lithography using polymethylmethacrylate (PMMA) resist on silicon substrates has been overcome. 5–7 nm wide etched lines in bulk Si substrates have been produced. A 65 nm thick layer of PMMA was exposed with an 80 kV electron beam of diameter smaller than 5 nm. After exposure the resist was developed in 3:7 cellosolve:methanol with ultrasonic agitation. The pattern in resist was transferred to the Si substrate with reactive ion etching. Lines of width varying between 5 and 7 nm were recorded using an S-900 scanning electron microscope which has a resolution of 0.7 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109609
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  • 5
    Electronic Resource
    Electronic Resource
    Enhancement of Coulomb blockade in semiconductor tunnel junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3170-3172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Coulomb blockade region was measured directly in an experimental single-electron memory device. The device was constructed with multiple-tunnel junctions (MTJ) formed by making a sidegated constriction in δ-doped GaAs. The Coulomb blockade region is defined by electron transfer rates of less than 10 electrons per second. At low values of sidegate voltages in the MTJ an enhancement of the Coulomb blockade is observed and explained by the formation of a nonuniform electrostatic potential in the semiconductor tunnel junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113712
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  • 6
    Electronic Resource
    Electronic Resource
    Single-electron effects in a point contact using side-gating in delta-doped layers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3145-3147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Side-gated point-contact structures in delta (δ)-doped layers have been used to form single-electron tunnel junctions with variable resistance. Clear Coulomb-blockade effects have been observed in the current-voltage characteristics. The measured characteristics are described in terms of a series of single-electron transistors formed by microsegments within the point contact. The effective tunnel capacitance and side-gate capacitance are estimated to be 10 and 1 aF, respectively, which are both one order of magnitude smaller than the reported capacitance of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107988
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  • 7
    Electronic Resource
    Electronic Resource
    Single-electron effects in heavily doped polycrystalline silicon nanowires (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1113-1115 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed single-electron charging effects in heavily doped polycrystalline silicon nanowires at 4.2 K. Wires of approximately 20 nm by 30 nm active cross section were defined by electron-beam lithography and thermal oxidation in standard polycrystalline silicon material. We have measured a Coulomb staircase and periodic current oscillations with gate bias, attributed to localized carrier confinement resulting from a statistical variation in the intergrain tunnel barriers. A sharp change in the current oscillation period is seen and we speculate that it is due to electrostatic screening of the gate bias by grain boundary defect states. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122101
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  • 8
    Electronic Resource
    Electronic Resource
    Characteristics of two Coulomb blockade transistors separated by an island to which an oscillating potential is applied: Theory and experiment (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 533-535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two Coulomb blockade devices connected in series and separated by a main island to which a rf signal was applied, are characterized electrically. The main island is large enough so that Coulomb phenomena in it can be neglected. Although no source–drain voltage is applied, the rf signal causes a current. The polarity of this current depends on the dc gate voltages, which control the two Coulomb blockade devices. The experimental data correspond closely to the simulations. Furthermore, it is evident from theoretical considerations that the circuit can pump electron packets against an applied potential. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1386615
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  • 9
    Electronic Resource
    Electronic Resource
    Conductance peak splitting in hole transport through a SiGe double quantum dot (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3624-3626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed the splitting of Coulomb oscillation peaks in coupled Si0.9Ge0.1 double quantum dots at 4.2 K. The quantum dots are formed by trench isolation, which means that the dots can be made much smaller than possible with the surface-gated approach. A dot diameter of 50 nm or less increases the charging energy and, therefore, the operating temperature of the device compared to previous approaches. A simulation of the results using parameters calculated from the lithographic dimensions of the device shows that a good fit to the experimental data can be achieved with a realistic interdot capacitance value. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377320
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  • 10
    Electronic Resource
    Electronic Resource
    Hole transport through single and double SiGe quantum dots (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3415-3417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on measurements of hole transport through a double quantum dot structure formed by trench isolation from a SiGe:Si heterostructure. A period change in the Coulomb oscillations is observed upon changing a gate bias, which is attributed to the lowering of one of the tunnel barriers, effectively changing the device to a single quantum dot. Accompanying the period change is a significant change in the level of noise associated with the oscillations. This is explained by a carrier energy filtering effect in the double dot compared with the single dot, caused by the slight difference in energy level spacing in each quantum dot. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328102
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