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  • 1
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    Diaspora and Trust (2021)
    Duke University Press
    Details
    Publication Date: 2024-04-02
    Description: Diaspora and Trust charts changing Sino-Latin relations at the outset of the 21st century. Combining political-economic analysis with ethnography, the book examines the responses of Cuba and Mexico to China’s growing global influence. Despite opposite economic policy orientations, neither Latin American country has successfully adapted to new conditions of cooperation and competition with China. Furthermore, Cuba and Mexico both struggle with uncertain relationships to the Chinese diaspora communities within their borders. TRUST AND DIASPORA draws on fieldwork in all three countries, providing a rich account of personal experiences at the intersection of global and local affairs. In the process, author Adrian H. Hearn advocates a paradigm for international relations and economic development predicated on the idea of trust. Hearn’s study theorizes trust as an alternative to existing models of exchange, including those based on social capital in the West and traditional Confucian values in China. The book argues convincingly for trust as a foundation for fruitful change in a globalized Cuba and Mexico and as a key to new balances of state, private, and civic power necessitated by the rise of China. This title was made Open Access by libraries from around the world through Knowledge Unlatched.
    Keywords: chinese diaspora ; politics ; history ; chinese mexico ethnic relations ; chinese cuba ethnic relations ; thema EDItEUR::N History and Archaeology::NH History::NHT History: specific events and topics::NHTB Social and cultural history
    Language: English
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    E-BOOK
  • 2
    Electronic Resource
    Electronic Resource
    Preparation and characterization of CeO2-based superconducting field effect transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8146-8149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-Tc superconducting field effect transistors using CeO2 as the dielectric layer in combination with ultrathin YBa2Cu3O7−δ layers have been prepared and investigated. The preparation process of these devices is described in detail. CeO2 is very compatible with ultrathin YBa2Cu3O7−δ layers, resulting in Tc values consistent with SrTiO3-based superconducting field effect transistors. The dielectric constant and the breakdown field of the CeO2 layer are reproducible in all investigated samples, yielding values for εr≈20 and Ebd≈2×108 V/m. This results in a charge transfer of ΔN=±2 μC/cm2. In the charge carrier enhancement mode this value is close to SrTiO3-based superconducting field effect transistors. So far, the maximum achieved modulation of the charge carrier density by the use of CeO2 as dielectric is 1.5%. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357865
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  • 3
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7 Josephson junctions and dc SQUIDs by mechanically induced growth disorder (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3220-3222 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple and reproducible method for the fabrication of high-Tc Josephson junctions and SQUIDs is presented. A very weak disturbance is produced by pressing a diamond needle onto the substrate surface before film deposition. The junction parameters such as the critical current Ic, the IcRn product, or β=2IcL/Φ0 (with L the self-inductance of the SQUID loop) are accessible by controlling the film thickness and can be varied by several orders of magnitude. The junctions usually have critical current densities jc in the range of 5×104–1×105 A/cm2 at 77 K and show Shapiro steps when exposed to rf power. The current-voltage characteristics are resistively shunted junctionlike and nonhysteretic. In dc SQUIDs a maximum peak-to-peak voltage response to dc flux of up to 12 μV at 77 K is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357513
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  • 4
    Electronic Resource
    Electronic Resource
    Production of Pure Rare Earth Metals (1952)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 44 (1952), S. 553-556 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50507a034
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  • 5
    Electronic Resource
    Electronic Resource
    Structural and electrical characterization of SrBi2Nb2O9 thin films deposited on YBa2Cu3O7−δ and Nb doped SrTiO3 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 960-964 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the crystal structure and the ferroelectric properties of SrBi2Nb2O9 (SBN) thin films with YBa2Cu3O7−δ (YBCO) as the bottom and Au as the top electrode. Epitaxial heterostructures of YBCO and SBN were prepared by dc and rf sputtering, respectively, on SrTiO3 substrates. In a second layout we used a semiconducting Nb doped (0.05 wt % Nb) SrTiO3 (N-STO) substrate as the bottom electrode. The crystal structure of the films was characterized by x-ray diffraction. Since the SBN films exhibit a perfect c-axis oriented growth without the (115) phase the hysteresis loop measurements do not indicate ferroelectric behavior of the SBN films. The diode with a N-STO bottom electrode reveals, for a positive and negative applied voltage, a depletion and accumulation of the carrier density, respectively. The time dependent polarization and depolarization current can be described by a power law (Curie-von Schweidler). The conductivity as a function of applied voltage can be explained by the Schottky effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370832
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  • 6
    Electronic Resource
    Electronic Resource
    Organized and semiorganized doping for ZnS:Mn electroluminescent devices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4244-4247 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The potential to achieve nonrandom Mn doping in ZnS:Mn material is discussed. By making diffusion measurements, we determine the required conditions during growth and operation of ZnS:Mn devices that are compatible with nonrandom doping. The probability of forming nearest neighbors and nearby neighbors of Mn in ZnS is calculated for various doping schemes, and the impact of these arrangements on the brightness of electroluminescence and photoluminescence in ZnS:Mn is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339097
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of thermal relaxation and low-temperature irradiation on the chemical short-range order of amorphous Zr-Fe alloys (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4141-4149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Zr100-xFex ribbons have been produced by melt spinning in the composition range 20≤x≤43. The superconducting transition temperature Tc is used as a probe for studying structural changes in the zirconium-rich alloys. Modifications of the short-range order are controlled by sample composition, by annealing at temperatures below the crystallization temperature (relaxation), and by low-temperature irradiation with heavy ions. In contrast to amorphous Zr-(Cu, Ni, Co) alloys, the critical temperature Tc in the Zr-Fe system increases with increasing annealing temperature. Low-temperature irradiations, on the other hand, lead to a decrease in Tc, which levels off at a value identical for as-quenched and relaxed samples. The results are discussed on the basis of an association model. In the amorphous state, the iron-poor alloy decomposes into iron-rich associates (possibly with Zr2Fe stoichiometry) embedded in a superconducting matrix, slightly improverished in iron, which is described as a regular solution of the components. The composition dependence of the electrical resistivity and the Vickers hardness, as well as previous Mössbauer experiments, indicate the existence of two different associates for x〉30, with concentrations of approximately 33 and 50 at. % Fe, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337496
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of irradiation-induced lattice defects on the quantum Hall effect in GaAs-AlxGa1−xAs heterostructures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3498-3500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs-AlxGa1−xAs heterostructures were irradiated with 6-MeV protons at low temperature to study systematically the influence of lattice disorder in two-dimensional electron systems on resistivity, mobility, carrier concentration n, and quantum Hall-effect structures. The additional irradiation-induced scattering centers lead to a linear decrease of n with the proton fluence and to a broadening of the quantum Hall plateaus, which is qualitatively explained in the framework of localization in magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342620
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  • 9
    Electronic Resource
    Electronic Resource
    Resistivity and Hall effect at high temperatures in La0.67Ca0.33MnO3 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4803-4805 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistivity tensors of La0.67Ca0.33MnO3 films were investigated at temperatures from the Curie temperature up to 600 K in magnetic fields up to 20 T. The diagonal transport is described by hopping of a small spin polaron cluster of 4 ions to nearest-neighbor spins. A spin-dependent activation energy and a mean field approximation for the magnetization of clustered polaron spins and unclustered Mn ion spins allowed the description of ρ(B,T) with a minimum of free parameters. The electron-like low field Hall coefficient showed a thermally activated behavior with an activation energy higher than that extracted from diagonal data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370487
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  • 10
    Electronic Resource
    Electronic Resource
    Thin YBa2Cu3O7−δ films by electron-beam coevaporation— Growth and in situ characterization (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2032-2034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the in situ preparation and characterization of thin YBa2Cu3O7−δ films on various substrates. The films were grown by electron-beam coevaporation of the pure metals Y, Ba, and Cu. A pressure stage is used to obtain high partial O2 pressure close to the substrate and low pressure in the main vacuum system. In situ resistance measurements were performed to investigate growth dynamics during film formation, and temperature dependence during the cool down from T≈1000 K to T≤Tc. The films were analyzed by R(T), ac susceptibility, x-ray diffraction, and critical transport current measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353147
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