Publication Date:
2018-06-06
Description:
Author(s): A. Kawasuso, M. Maekawa, A. Miyashita, K. Wada, T. Kaiwa, and Y. Nagashima Positronium formation at Si(111) and Si(001) surfaces has been investigated by changing the doping level systematically over the range 300–1000 K. The temperature dependence of the positronium fraction varied with the doping condition, and there were practically no differences between the two surfac... [Phys. Rev. B 97, 245303] Published Tue Jun 05, 2018
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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