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  • 1
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    cell-type-specific morphine plasticity in NAc [Neuroscience] (2016)
    National Academy of Sciences
    Details
    Publication Date: 2016-01-21
    Description: Drug-evoked plasticity at excitatory synapses on medium spiny neurons (MSNs) of the nucleus accumbens (NAc) drives behavioral adaptations in addiction. MSNs expressing dopamine D1 (D1R-MSN) vs. D2 receptors (D2R-MSN) can exert antagonistic effects in drug-related behaviors, and display distinct alterations in glutamate signaling following repeated exposure to psychostimulants; however, little...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 2
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    Impaired mucus detachment disrupts mucociliary transport in a piglet model of cystic fibrosis (2014)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2014-08-16
    Description: Lung disease in people with cystic fibrosis (CF) is initiated by defective host defense that predisposes airways to bacterial infection. Advanced CF is characterized by a deficit in mucociliary transport (MCT), a process that traps and propels bacteria out of the lungs, but whether this deficit occurs first or is secondary to airway remodeling has been unclear. To assess MCT, we tracked movement of radiodense microdisks in airways of newborn piglets with CF. Cholinergic stimulation, which elicits mucus secretion, substantially reduced microdisk movement. Impaired MCT was not due to periciliary liquid depletion; rather, CF submucosal glands secreted mucus strands that remained tethered to gland ducts. Inhibiting anion secretion in non-CF airways replicated CF abnormalities. Thus, impaired MCT is a primary defect in CF, suggesting that submucosal glands and tethered mucus may be targets for early CF treatment.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4346163/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4346163/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Hoegger, Mark J -- Fischer, Anthony J -- McMenimen, James D -- Ostedgaard, Lynda S -- Tucker, Alex J -- Awadalla, Maged A -- Moninger, Thomas O -- Michalski, Andrew S -- Hoffman, Eric A -- Zabner, Joseph -- Stoltz, David A -- Welsh, Michael J -- DK054759/DK/NIDDK NIH HHS/ -- DP2 HL117744/DP/NCCDPHP CDC HHS/ -- DP2 HL117744/HL/NHLBI NIH HHS/ -- HL051670/HL/NHLBI NIH HHS/ -- HL091842/HL/NHLBI NIH HHS/ -- P01 HL051670/HL/NHLBI NIH HHS/ -- P01 HL091842/HL/NHLBI NIH HHS/ -- P30 DK054759/DK/NIDDK NIH HHS/ -- Howard Hughes Medical Institute/ -- New York, N.Y. -- Science. 2014 Aug 15;345(6198):818-22. doi: 10.1126/science.1255825.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Molecular Physiology and Biophysics, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. ; Department of Pediatrics, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. ; Department of Internal Medicine, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. ; Central Microscopy Research Facility, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. ; Department of Internal Medicine, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. Department of Radiology, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. Department of Biomedical Engineering, University of Iowa, Iowa City, IA 52242, USA. ; Department of Molecular Physiology and Biophysics, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. Department of Internal Medicine, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. Department of Biomedical Engineering, University of Iowa, Iowa City, IA 52242, USA. david-stoltz@uiowa.edu michael-welsh@uiowa.edu. ; Department of Molecular Physiology and Biophysics, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. Department of Internal Medicine, University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. Howard Hughes Medical Institute (HHMI), University of Iowa, Roy J. and Lucille A. Carver College of Medicine, Iowa City, IA 52242, USA. david-stoltz@uiowa.edu michael-welsh@uiowa.edu.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/25124441" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Animals, Newborn ; Anions/metabolism ; Cilia/physiology ; Cystic Fibrosis/*physiopathology ; Cystic Fibrosis Transmembrane Conductance Regulator/physiology ; Disease Models, Animal ; Exocrine Glands/*secretion ; Lung/physiopathology ; Methacholine Chloride/pharmacology ; *Mucociliary Clearance ; Mucus/*secretion ; Respiratory Mucosa/*physiopathology ; Respiratory System/*physiopathology ; Swine ; Trachea/physiopathology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
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    Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-11-01
    Description: Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (∼10 4   - 10 6  cm −2 ) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at E c -2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be N t  = 3 × 10 12 , 2 × 10 15 , and 5 × 10 14  cm −3 , respectively. The E c -2.92 eV level is observed to be the primary compensating defect in as-grown n -type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n -GaN is essential for enabling large V BD in the next-generation wide-bandgap power semiconductor devices. Thus, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
    Electronic Resource
    Electronic Resource
    Coupled resonator vertical-cavity laser diode (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3020-3022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of an electrically injected monolithic coupled resonator vertical-cavity laser which consists of an active cavity containing InxGa1−xAs quantum wells optically coupled to a passive GaAs cavity. This device demonstrates modulation characteristics arising from dynamic changes in the coupling between the active and passive cavities. A composite mode theory is used to model the output modulation of the coupled resonator vertical-cavity laser. It is shown that the laser intensity can be modulated by either forward or reverse biasing the passive cavity. Under forward biasing, the modulation is due to carrier induced changes in the refractive index, while for reverse bias operation the modulation is caused by field dependent cavity enhanced absorption. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125220
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  • 5
    Electronic Resource
    Electronic Resource
    Intrinsic exciton transitions in GaN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 455-461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic excitonic transitions in GaN have been studied using a variety of spectroscopic measurements. Sharp spectral structures associated with intrinsic free excitons could be observed in photoluminescence, reflection, and absorption spectra. The energy positions of excitonic transitions in GaN epitaxial layers were found to be influenced by the residual strain resulting from lattice-parameter and thermal-expansion mismatches between the epilayers and the substrates. The values of the four principal deformation potentials of wurtzite GaN were derived by using the strain tensor components determined by x-ray measurements. The observation of spectral features involving the emission of LO phonons in absorption and photoluminescence excitation spectra at energies above exciton resonances indicate that a phonon-assisted indirect excitation process, which simultaneously generates a free exciton and a LO phonon, is a very significant and efficient process in GaN. The lifetime of the free excitons is found to be longer than the relaxation time of LO-phonon emission but much shorter than that of acoustic-phonon emission. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366660
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  • 6
    Electronic Resource
    Electronic Resource
    Femtosecond wave mixing experiments in ZnCdSe/ZnSe quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1534-1536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extreme high order nonlinear diffracted signals are found in ZnCdSe/ZnSe quantum wells in two beam, self-diffraction geometry. Diffracted signals of all observed orders are shown to originate predominantly from excitonic resonances. Using four-wave mixing, an indication of hole-longitudinal optical phonon scattering between the heavy and the light hole states is found, and exciton-phonon interaction is studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112034
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature-dependent absorption measurements of excitons in GaN epilayers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1981-1983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption measurements were performed on a series of thin GaN epilayers. Sharp spectral features were observed due to the 1s A and B exciton transitions. Using polarization dependent absorption, the C exciton transition was identified. A broad absorption feature was observed at ∼3.6 eV, which is attributed to indirect exciton-phonon absorption. The excitonic structure was found to persist well above room temperature. A fit to the Varshni formula yielded a temperature dependence of E(T)=E(T=0)−11.8×10−4T2(1414+T) eV for the A and B excitons. The exciton absorption linewidth was studied as a function of temperature, indicating that GaN exhibits very large exciton-phonon coupling. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119761
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  • 8
    Electronic Resource
    Electronic Resource
    "S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1370-1372 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous emission behavior, specifically an S-shaped (decrease–increase–decrease) temperature dependence of the peak energy (Ep) for InGaN-related PL with increasing temperature: Ep redshifts in the temperature range of 10–70 K, blueshifts for 70–150 K, and redshifts again for 150–300 K with increasing temperature. In addition, when Ep redshifts, the spectral width is observed to narrow, while when Ep blueshifts, it broadens. From a study of the integrated PL intensity as a function of temperature, it is found that thermionic emission of photocarriers out of local potential minima into higher energy states within the wells is the dominant mechanism leading to the thermal quenching of the InGaN-related PL. We demonstrate that the temperature-induced S-shaped PL shift is caused by a change in the carrier dynamics with increasing temperature due to inhomogeneity and carrier localization in the InGaN/GaN MQWs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122164
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  • 9
    Electronic Resource
    Electronic Resource
    Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 740-742 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of spectroscopic studies on GaN based epitaxial materials on SiC substrates by metalorganic chemical vapor deposition. A variety of techniques has been used to study the optical properties of GaN epilayers and GaN/AlGaN heterostructures. Sharp spectral structures associated with the intrinsic free excitons were observed by photoluminescence and reflectance measurements from GaN based materials grown on SiC substrates. The residual strain was found to have a strong influence in determining the energies of exciton transitions. Picosecond relaxation studies of exciton decay dynamics suggest that an AlGaN cladding layer with a small mole fraction of AlN can be relatively effective in enhancing the radiative recombination rate for excitons by reducing the density of dislocations and suppressing surface recombination velocity in the GaN active layer for the GaN/AlGaN heterostructure samples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117876
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  • 10
    Electronic Resource
    Electronic Resource
    Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3689-3691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high-energy peak was observed to always be lower than that of the low-energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122864
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