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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence study of Si+- and Si++P+-implanted InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4894-4896 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence was used to study the Si+- and Si++P+-implanted InP. A broadband at ∼ 1.26 eV appears in photoluminescence spectra for Si+-implanted InP after annealing. The intensity of this broadband decreases with increasing the coimplanted P+ dose and increases with increasing the implanted Si+ dose. The temperature dependence of the photoluminescence data shows that the change in the half-width of the broadband can fit the configuration coordinate model. This band is believed to be due to VP-SiP complex. The results indicate that silicon is an amphoteric species in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346123
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  • 2
    Electronic Resource
    Electronic Resource
    Ion beam controllable modification of YBa2Cu3O7−x superconducting thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7915-7917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconducting transport properties of high-quality epitaxial YBa2Cu3O7−x thin films have been controllably modified using Ar+ ion implantation. It was found that both the critical current density Jc and the superconducting transition temperature Tc significantly decreased with fluence. However, when Jc (at 77 K, H=0) decreased by six orders of magnitude, Tc only decreased from 89 to 77.5 K. A fluence of 5×1012 Ar/cm2 was sufficient to reduce Jc near zero, but Tc still remained above 77 K. We have observed the structure and the morphology of the sample using x-ray diffraction and high-resolution transmission electron microscopy. A film irradiated with Ar+ ions became semiconductor at a bombardment fluence of about 1.2×1013 Ar/cm2, while its superconducting state completely disappeared for an Ar+ dose of about 2.2×1013 Ar/cm2. An Ar+ fluence of 5×1014 Ar/cm2 made the sample amorphous with so high resistivity that it could be treated as insulator. The experimental results showed the possibility of fabricating Josephson junction devices from YBa2Cu3O7−x superconducting thin films and patterning this kind of films by ion implantation technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347481
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-beam-modified polyimide as a novel temperature sensor: Fundamental aspects and applications (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 202-206 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A series of polyimide films irradiated by 170 keV N+ and 120 keV B+ with controlled and related implantation conditions were investigated with respect to their microstructures in modified layers, as well as their application prospects as temperature sensors. The sensitivities and sensitive ranges of these functional materials were correlated with the implantation conditions in terms of the Raman spectroscopic results. This well-defined relationship was interpreted with perspectives of ion beam microstructural modification, which provides a deeper insight into the fundamental aspects for the synthesis of temperature-sensitive materials out of polyimide precursor. It seems that greater irradiation dose, stronger beam current density, and higher target temperature constitute a set of favorable conditions for the fabrication of temperature sensors with a comparatively broad sensitive scope.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143829
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  • 4
    Electronic Resource
    Electronic Resource
    Structural properties of carbon nitride films prepared by high dose nitrogen implantation into carbon thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2364-2368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride films were successfully prepared by ion beam synthesis method. 100 keV N+ ions at a dosage of 1.2×1018 cm−2 were implanted into carbon thin films at different temperatures. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering spectroscopy (RBS), x-ray diffraction analysis (XRD), and Vickers microhardness measurement. XPS results show that most of the implanted nitrogen atoms are free state. Most of the carbon atoms have C–C bonding and a little of them form a C–N bond. It also can be clearly seen that the content of the C–N covalent bonding state in the samples is increased by raising the implanting temperature of the samples. Raman spectrum indicates that there is a Raman band near 2300 cm−1 corresponding to carbon-nitrogen stretching. XTEM and RBS studies show that there is a buried layer of carbon nitride. XRD and TEM analyses reveal that the buried carbon nitride is predominantly amorphous with a small volume fraction of nanocrystallites. The sample has a higher hardness than that of a carbon thin film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361163
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  • 5
    Electronic Resource
    Electronic Resource
    Ti silicide formation on thin-film silicon on insulator (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2004-2006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter the formation of Ti silicide on thin-film silicon on insulator has been investigated. The experimental results indicated that uniform TiSi2 layers with a low sheet resistance of 4.0–4.5 Ω/(D'Alembertian) can be formed on thin-film silicon on insulator with a high carrier concentration of 2×1020/cm3. So a structure of Ti/n+-Si/SiO2/Si can be obtained. Secondary-ion mass spectrometer profiles of the As showed that a relatively homogeneous redistribution of the As in the TiSi2 layer is revealed and the As pileup at Si/SiO2 interface is noticeable when the thickness of the silicon overlayer after the TiSi2 formation is less than 520 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103230
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  • 6
    Electronic Resource
    Electronic Resource
    High carrier concentration in InP by Si+ and P+ dual implantations (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 463-465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dual implantations of 150 keV Si+ ions and 160 keV P+ ions with the same dose of 1×1015/ cm2 were performed at 200 °C. Si3 N4 encapsulated samples were annealed in a conventional furnace or a halogen tungsten lamp rapid thermal annealing system. The carrier concentration profiles show that the Si dopant is highly activated and its indiffusion is effectively reduced with the help of P+ implantation and rapid thermal annealing. The highest carrier concentration of 5×1019 /cm3 , corresponding to an activation of 70%, an average electron mobility of 750 cm2 /V s, and a sheet resistance of 11 Ω/(D'Alembertian), has been obtained in Si+ and P+ dually implanted InP after rapid thermal annealing at 850 °C for 5 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102766
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  • 7
    Electronic Resource
    Electronic Resource
    Optical transition properties of β-FeSi2 film (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical transition of properties of β-FeSi2 film have been investigated by optical transmittance absorption measurement, spectroscopic ellipsometry and reflectivity. Optical transmittance absorption measurement ranging from 0.5 to 1.1 eV revealed the direct transition at E0=0.84 eV, while absorption curve obtained from the spectroscopic measurement in the range of 1.5–4.5 eV implied additional transition at E'=1.05 eV, it is suggested that such additional transition originates from spin–orbit splitting at Γ (center of Brillouin's zone). Reflectivity goes to the maximum value near Eg, indicating that the joint density of states in the transition at Eg is very high. Another peak which is related with the transition at E' was also observed in the reflectivity spectra. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112450
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  • 8
    Electronic Resource
    Electronic Resource
    High activation efficiency in Mg+ implanted GaAs by P+ coimplantation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2093-2095 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coimplantation of 125 keV Mg+ ions and 160 keV P+ ions with the same dose of 5×1014 cm−2 was investigated. Samples were annealed in a conventional furnace or a halogen tungsten lamp rapid thermal annealing system. It was found that the additional implant of P+ improves the electrical quality of the Mg+ implanted GaAs more effectively than additional implant of As+. By using rapid thermal annealing, a maximum activation efficiency of 92% with a sheet resistance of 145 Ω/(D'Alembertian) was obtained for Mg+ and P+ coimplantation after an anneal at 1050 °C for 5 s, while the maximum activation efficiency for Mg+ single implant was 36% corresponding to a sheet resistance of 358 Ω/(D'Alembertian) after an anneal at 800 °C for 5 s. Coimplantation of P+ evidently can also reduce the redistribution of the implanted Mg.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108317
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  • 9
    Electronic Resource
    Electronic Resource
    Structural investigation of aromatic polyimide films modified by ion beams: A comparative study (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3110-3112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron (XPS) and Raman spectroscopy were employed in the structural investigation of the modified polyimide films irradiated with boron ion beams. XPS discloses the formation of graphite bonding especially when irradiation comes up to a dose around 3×1016 B+/cm2. Raman spectroscopy, together with the calculation of its reduced spectra as well as the one-phonon state density of amorphous graphite, is inclined to demonstrate a structural similarity between modified polyimide films and amorphous graphite in short range order. The degree of this similarity depends on the irradiation condition. From this view point, the effects of dose and beam current density upon the final microstructures of the irradiated polyimide films were also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105780
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of slow positron annihilation in silicide films formed by solid state interaction of Co/Ti/Si and Co/Si (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2501-2503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si. Variable-energy (0–20 keV) positrons were implanted into samples at different depths. The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies were characterized by a line-shape parameter "S.'' It was found that the measured S parameters were sensitive to thin-film reaction and crystalline characteristics. In particular, the S parameter of epitaxial CoSi2 formed by the ternary reaction was quite different with that of the polycrystalline CoSi2 formed by direct reaction of Co with Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111579
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