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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of superconducting YBa2Cu3O7−x on Si(100) with CaF2 as intermediate buffer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5095-5098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial superconducting YBa2Cu3O7−x (YBCO) thin films have been grown on Si(100) using CaF2 as an intermediate buffer layer. The CaF2(100) layers were grown by molecular beam epitaxy while for the YBCO layers a laser ablation process was used. Electron channeling patterns of the YBCO surface show the characteristic four-fold symmetry for c-axis orientation. The epitaxial relationship is (001)YBCO//(001)Si and [010]YBCO//[110]Si. This corresponds to a lattice mismatch of only 1% in the a-b-YBCO interface plane. The 60-nm-thick layers are crack free. Magnetic shielding properties of the epitaxial YBCO layers have been studied by measuring the zero temperature penetration depth λab(0) and the power law dependence of the transition temperature versus magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350611
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3364-3367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of p-n+ junctions in PbTe layers on Si(111) grown by molecular beam epitaxy are described. The temperature dependence of the leakage currents and ideality factors show that the junctions are generation-recombination limited over the 300–100 K range. The lifetimes deduced for the minority carriers (about 0.1 ns) suggest that their diffusion length is limited by the density of the threading dislocations, which was about 108 cm−2 for these heavily lattice mismatched layers. The theoretical diffusion limit at 200 K would be attained by reducing the dislocation density by a factor of 100. Such low densities have already been obtained in lead–chalcogenide layers on Si substrates by temperature cyclings. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369685
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  • 3
    Electronic Resource
    Electronic Resource
    Schottky-barrier fluctuations in Pb1−xSnxSe infrared sensors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7138-7143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Pb1−xSnxSe layers have been grown on Si substrates, and Schottky-barrier infrared sensors were fabricated in the layers using Pb blocking contacts. The observed current–voltage characteristics (saturation currents j0 and ideality factors n) as a function of temperature are quantitatively explained with a fluctuation model of the barrier heights [J. H. Werner, W. Güttler, J. Appl. Phys. 69, 1991 (1522)]. The amount of the mean barrier fluctuation σ, which is typically 10–30 meV, depends on the layer quality and fabrication procedure. Higher σ causes higher j0 with increasing saturation values at low temperatures. In addition, the fluctuations cause high n(〉2) values at low temperatures. Layers with improved structural quality (higher mobilities and lower threading dislocation densities) lead to lower barrier fluctuations and, therefore, to increased sensitivities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363735
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  • 4
    Electronic Resource
    Electronic Resource
    Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1911-1916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of PbSe on (111)- and (100)-oriented Si substrates without an intermediate buffer layer is studied. It is found that on Si(111) the orientation of the IV-VI layer can by varied from (100) at 200 °C to (111) at 400 °C substrate temperature. On Si(100), only (100)-oriented layers were obtained for the whole temperature range. (100)-oriented layers with thicknesses above 0.5 μm were cracked due to thermally induced mechanical strain on cooldown to room temperature. This strain cannot be relaxed by dislocation glide in the first glide systems as it is the case for (111)-oriented layers. The structural quality of (100)-oriented PbSe layers on Si(100) and Si(111) is inferior compared to layers grown with an intermediate BaF2/CaF2 or CaF2 buffer layer. This implies that the covalent/ionic PbSe/Si interface seems to impede high-quality epitaxy, contrary to the well known ionic/ionic IV-VI/IIa-fluoride interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361076
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  • 5
    Electronic Resource
    Electronic Resource
    Photovoltaic infrared sensors in heteroepitaxial PbTe on Si (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1608-1610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arrays of photovoltaic infrared sensors for thermal imaging applications have been fabricated in narrow gap PbTe grown heteroepitaxially on Si substrates. PbTe epitaxy was achieved with the aid of intermediate CaF2 /BaF2 buffer layers of only ≈2000 A(ring) thickness. Blocking Pb contacts on about 3-μm-thick p-PbTe layers form the active areas of the sensors. Cutoff wavelengths are 5.6 μm, and resistance-area products are up to R0A=400 Ω cm2 at 85 K with mean value R0A≈150 Ω cm2 for 66 element linear arrays, well above the room-temperature photon field background noise limit. The temperature dependence of R0A indicates a depletion-limited noise current behavior between 250 and 100 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99926
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  • 6
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2-CaF2 as a buffer (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1108-1110 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CdTe (100) has been grown on (100) oriented Si by molecular beam epitaxy using BaF2-CaF2 as a buffer. Two-dimensional (2-D) growth of BaF2(100) is obtained using low-temperature thermal cycles during growth. CdTe growth is also 2-D above 270 °C substrate temperature and a 2×1 surface reconstruction indicating a Te-stabilized surface is obtained. The growth is 3-D at lower substrate temperatures. Good structural quality films showing sharp electron channeling patterns and pronounced photoluminescence at 77 K are obtained. The full width at half maximum of the band-edge peak is 12 meV at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103506
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  • 7
    Electronic Resource
    Electronic Resource
    Heteroepitaxial Pb1−xSnxSe on Si infrared sensor array with 12 μm cutoff wavelength (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 969-971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An array of photovoltaic infrared sensors with 12 μm cutoff wavelength has been fabricated for the first time in a narrow-gap semiconductor layer grown heteroepitaxially on Si. Heteroepitaxy is achieved using intermediate stacked epitaxial CaF2-SrF2-BaF2 buffer layers to overcome the large lattice as well as thermal expansion mismatch between narrow-gap Pb1−xSnxSe and Si. The IR sensors exhibit resistance-area products up to 0.3 Ω cm2 at 77 K. This corresponds to sensitivities which are above the 300 K background noise limit and only 2–5 times lower than those of state of the art Hg1−xCdxTe sensors on CdZnTe substrates with the same cutoff wavelengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101692
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of lattice-mismatched stacked epitaxial CaF2-SrF2-BaF2 layers on (100) oriented Si substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1512-1514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100) oriented BaF2 has been grown epitaxially onto Si(100) despite its large lattice mismatch of 14% and preferred (111) growth mode. (100) epitaxy was achieved using thin intermediate CaF2 and/or SrF2 buffers to overcome the mismatch in a stepwise manner. Growth is three dimensional, and a roughness of the top surface in the 10 nm range was obtained. Ion channeling minimum yields are below 4% even for layers as thin as 3000 A(ring). Thermal misfit strains relieve due to movement of misfit dislocations. The layers are intended for use as epitaxial buffers for growth of compound semiconductors on Si(100) substrates with up to 20% total lattice mismatch.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100432
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  • 9
    Electronic Resource
    Electronic Resource
    Direct growth of heteroepitaxial CuInSe2 layers on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2299-2301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial CuInSe2 (CIS) layers have been directly grown on Si substrates by molecular beam epitaxy. Epitaxial growth is achieved by using a proper thermal treatment of the substrate prior to the growth and also during the initial stage of CIS growth. (100)-oriented and (112)-oriented CIS layers with chalcopyrite crystal structure, and free from impurity phases have been obtained on Si(100) and Si(111), respectively. Different methods have been used to study the growth kinetics and structural quality of the epitaxial layers. Twinning in (112)-oriented CIS layers depends on the deposition recipe. A Rutherford backscattered ion channeling minimum yield of about 13%, and an x-ray rocking-curve width of about 900 arcsec have been measured for a 0.4 μm thick heteroepitaxial CIS(112) layer on Si(111) substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112723
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3347-3349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CuIn3Se5 layers were grown on CuInSe2/Si(111) substrates by molecular beam epitaxy. Photoemission spectra of (112)-oriented CuIn3Se5 and CuInSe2 epitaxial layers were studied and the structures in the upper valence band are correlated with the Cu 3d and Se 4p density of states. The main valence band of CuInSe2 exhibits the three peak structure (consistent with theory) while a broadband with a shoulder is observed for the CuIn3Se5 phase. Electron channeling and x-ray diffraction confirmed the epitaxial growth of (112)-oriented layer. Surface and bulk composition analyses, position of valence band maxima, and a Se related vibrational mode at 153 cm−1 in Raman scattering measurements established the growth of the CuIn3Se5 phase. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112387
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