ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Techniques have been developed to produce ohmic contacts to naturally occurring boron doped semiconducting diamond. Thin films of Mo, Mo/Au, and Mo/Ni/Au deposited on diamond produced adherent ohmic contacts after annealing at 950 °C. A thermally activated solid state reaction which produces a refractory carbide precipitate at the original diamond/metal interface is the principal factor in affecting the properties of the contacts. The interface reaction has been characterized using Auger electron spectroscopy, scanning electron microscopy, x-ray diffraction, metallography, and I-V measurements.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346529
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