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  • 1
    facet.materialart.
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    A Bibliography of Chinese Language Materials on the People's Communes (2021)
    University of Michigan Press | U OF M CENTER FOR CHINESE STUDIES
    Details
    Publication Date: 2024-03-29
    Description: A research tool for scholars studying modern China, particularly those focusing on the post-1949 communal system and economy. The work includes full bibliographic references to some 2,800 essay, articles, pamphlets, and other materials in Chinese taken from more than 130 publications, primarily from mainland. The entries are arranged are arranged topically with annotations. Includes a geographic index to the communes referred to in the listed items.
    Keywords: Sociology and anthropology ; thema EDItEUR::J Society and Social Sciences::JH Sociology and anthropology
    Language: English
    Format: image/jpeg
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    E-BOOK
  • 2
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    Recent trend of industrial emissions in developing countries (2016)
    Details
    Publication Date: 2019-04-01
    Keywords: ddc:600
    Repository Name: Wuppertal Institut für Klima, Umwelt, Energie
    Language: English
    Type: contributiontoperiodical , doc-type:contributionToPeriodical
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    PAPER (OA)
  • 3
    Electronic Resource
    Electronic Resource
    Stereospecific skeletal rearrangement reactions in bridgehead-substituted bicyclo[2.2.2] systems under neutral conditions (1987)
    s.l. : American Chemical Society
    The @journal of organic chemistry 52 (1987), S. 2509-2517 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00388a031
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  • 4
    Electronic Resource
    Electronic Resource
    Cumulative deuterium isotope effects on the conformational equilibria of tribenzylamine (1991)
    s.l. : American Chemical Society
    The @journal of organic chemistry 56 (1991), S. 3928-3935 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00012a028
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  • 5
    Electronic Resource
    Electronic Resource
    An improved method for detecting hot spots in field emission cathode arrays (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3889-3891 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present an improved liquid crystal microthermography technique for the detection of defects in large area field emission cathode arrays. Defects can cause electrical leakage paths, leading to localized heating at the defect location. The thermal gradients at these hot spots can be detected by liquid crystal microthermography, but, the direct placement of the liquid crystal is a two step process. First the liquid crystal is deposited by spin coating the device and the liquid crystal has to be removed from the device after the test. This process, apart from being time consuming, can lead to contamination of the test device. In this article, we present an improved liquid crystal microthermography technique for the detection of hot spots in field emitter arrays. The improvement is obtained by hermetically sealing the liquid crystal material inside a packaged assembly made from a glass support and a thin plastic membrane. We have used the new method for the detection of hot spots in large area field emission cathode arrays. This technique provides accurate detection of hot spot locations caused by leakage currents as low as 100 μA.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150008
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  • 6
    Electronic Resource
    Electronic Resource
    Modeling of yoke giant magnetoresistance heads : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4918-4920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yoke giant magnetoresistance (GMR) heads are of interest for ultrahigh density recording. To optimize the design and efficiency of these heads, a comprehensive model was developed in which the total efficiency is the product of ratios of several fluxes in the head structure. The model consists of a network of shunt reluctances, which provide flux paths between the top and bottom yoke films, and series reluctances, which represent the yoke and GMR sensor films plus yoke-sensor overlap contacts. Expressions for individual reluctances are derived from a transmission line analysis of variable gap head segments, the series reluctances of magnetic films, and an analysis of flux leakage between the yoke and sensor films. A sensitivity analysis was performed for several parameters. The efficiency was found to be sensitive to the throat height and the planar area of the yoke-sensor contact. The model predicts a 53.6% efficiency for a 10 Gbit/in.2 head with a 1 μm throat height and a 2 μm yoke-sensor overlap. Assuming a GMR sensitivity of 0.2%/Oe and the above efficiency, a 580 μV p-p output will result from a 0.5 memu/cm2 media. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365545
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  • 7
    Electronic Resource
    Electronic Resource
    In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2288-2290 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a method for removing oxides and producing atomically flat Si(100) surfaces with single atomic height steps using a Si flux cleaning technique. By introducing a Si flux in the range 1.0–1.5 Å/s at the onset of an SiO2 thermal desorption step as low as 780 °C, scanning tunneling microscopy (STM) and atomic force microscopy images reveal smooth surfaces with atomically flat terraces with an rms roughness of 0.5 Å and single-step heights of 1.4 Å. STM reveals that A- and B-type steps are present across the entire area of the scanned surface. Desorption of the surface oxide layer with Si fluxes below this range results in rougher surfaces with pits ∼50 Å deep and 1000 Å across. For Si fluxes above this range, no pits are seen but atomic steps are not visible on the surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119083
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  • 8
    Electronic Resource
    Electronic Resource
    Etching of Si(111)-(7×7) and Si(100)-(2×1) surfaces by atomic hydrogen (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1818-1820 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present scanning tunneling microscopy (STM) studies of the etching behavior of the surfaces of Si(111)-(7×7) and Si(100)-(2×1) by atomic hydrogen. Etching proceeds via the formation of volatile SiH4 through a two-step mechanism in which the H atoms react with SiH2 and SiH3 species on the surface at room temperature. By measuring the area of etch pits in the STM images taken under the same flux conditions, the etching of Si(100) is determined to be nearly three times faster than that of Si(111) because intermediate hydride products are more readily stabilized on the (100) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113332
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1394-1396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal growth conditions on the morphology and surface work function of iridium oxide thin films grown by annealing Ir thin films in an O2 ambient is presented. The samples were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and photoelectric work function measurements. It is found that, with increasing temperature, IrO2 changes from (110) oriented to a mixture of (110) and (200) during the oxide growth. This is manifested as a sharpening of the photoelectric energy distributions at 800 °C. The surface work function was determined to be 4.23 eV using ultraviolet photoelectron spectroscopy. X-ray photoelectron spectroscopy analysis shows that IrO2 starts to form at 600 °C accompanied by surface roughening. Annealing the Ir film at 900 °C in O2 ambient leads to almost complete desorption of the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123561
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  • 10
    Electronic Resource
    Electronic Resource
    Void formation on ultrathin thermal silicon oxide films on the Si(100) surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1270-1272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of voids on the thermally grown (650 °C) ultrathin (∼1 nm) silicon oxide films on the Si(100) surface was investigated by using ultrahigh vacuum scanning tunneling microscopy. Voids form randomly on the ultrathin oxide film upon thermal annealing at 750 °C. In contrast to void formation observed on thicker (〉5 nm) thermal silicon oxide films and that observed on ultrathin (∼1 nm) oxide films formed by room temperature O2 adsorption, the number of voids increases during annealing. We find that Si monomer creation and SiO production compete kinetically in the void formation process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117388
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