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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1947-1950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of a SiGe/Si quantum well grown by molecular-beam epitaxy is studied by using the admittance spectroscopy technique. The values of activation energies of hole emission from the subbands in the SiGe/Si quantum well are derived from the admittance spectra. After annealing the sample at different temperatures, the activation energy varies in different behaviors. There is no significant change of the activation energy after annealing at 700 °C for 40 min. At the annealing temperature of 900 °C, the decrease of the activation energy with annealing time could be attributed to the interdiffusion of Ge, Si atoms at the heterointerfaces and the strain relaxation effect. An unexpected phenomenon is observed at the annealing temperature of 800 °C, i.e., the activation energy increases with the annealing time. This extraordinary phenomenon is supposed to be caused by the change of the well potential shape due to the B out-diffusion from the well to the Si barrier. © 2000 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2974-2977 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice parameters of heavily boron doped silicon homoepitaxial layers before and after rapid thermal annealing at different temperatures (800–1100 °C) are characterized by x-ray double crystal diffraction. The results illustrate that although the strain relaxation occurs after the rapid thermal annealing (RTA) treatment, the improvement of the crystalline quality of epitaxial layers are observed at RTA temperatures higher than 1000 °C. The proportional relationship between the lattice mismatch and the substitutional boron concentration with the lattice contract coefficient β=5.3 (in units 10−24 cm3) is valid up to the concentration of 3×1020 cm−3. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 213-217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial defects at the p-Si epitaxial layer/p-Si substrate interface have been studied by deep-level transient spectroscopy (DLTS). By solving Poisson equation, the electron concentration at the defect level varied with external voltage is derived. The emission and capture of electrons at the defect level, which are not observable in conventional DLTS, can be detected simultaneously in a single temperature scan by properly choosing the experimental parameters. The experimental results show that the energy level of the interfacial defects is located at Ec−0.30 eV. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6603-6603 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction experiments have been performed in order to study the magnetic ordering of BaCuO2+x. In these measurements unpolarized neutrons and polarized neutrons with full polarization analysis have been utilized. From these measurements it has been determined that BaCuO2+x orders antiferromagnetically below TN=15.0±0.5 K with a magnetic propagating vector κ=[1 1 1]. This structure is commonly referred to as a [πππ] or a G structure. The Cu atoms in the Cu6 ring clusters, located at the (1/4, 1/4, 1/4) positions, order ferromagnetically within these clusters while the clusters themselves order antiferromagnetically. The ordered magnetic moment of each of these Cu atoms is 0.89±0.05 μB at T=4.2 K. No evidence of long-range magnetic ordering of the Cu atoms in the Cu18 clusters, located at the (0, 0, 0) and (1/2, 1/2, 1/2) positions, was found down to a temperature T=2.5 K. The work at Oak Ridge National Laboratory (ORNL) was sponsored by the Division of Materials Sciences, U.S. Department of Energy (DOE). ORNL is managed for the U.S. DOE by Martin Marietta Energy Systems, Inc., under Contract No. DE-AC05-84OR21400. Ames Laboratory is operated for the U.S. DOE under Contract No. W-7405-Eng-82. The work at Ames was supported by the Director for Energy Research, Office of Basic Energy Sciences.
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Zn1−xMnxSe, Mn2+ d→d* transitions were found to induce giant Faraday rotation, and peaks of the Faraday rotation spectra were red-shifted linearly with increasing Mn composition. Through studying the magneto-optical transition variation with Mn composition, the Mn composition can be determined. Results from the Faraday rotation analysis were compared with the x-ray diffraction data and were found in good agreement with each other. © 1996 American Institute of Physics.
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing (RTA) on the electrical properties of heavily boron-doped silicon epilayer grown at 680 °C by molecular-beam epitaxy and coevaporation of B2O3 is studied. Through the RTA process, the boron clusters in the epilayer break into boron atoms and the interstitial boron enters the substitutional site. These two effects cause the improvement of the electrical properties of the silicon epilayer. After RTA at 1100 °C for 10 s, the hole concentration can reach 3.1×1020 cm−3 with the mobility of 39 cm2/V s, which is about the same as that of the bulk silicon, while the oxygen concentration is less than 1018 cm−3. It is also shown that the full width at half-maximum of the x-ray-diffraction rocking curve decreases as the RTA temperature increases. The RTA process does not affect the steep distribution of carrier concentration at the epilayer/substrate interface which differs by about 6 orders of magnitude across the interface with the leading edge slope of 25–30 nm/decade.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3282-3285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A wet thermal oxidation method is proposed to passivate the electrochemically etched porous silicon. Bright and stable photoluminescence is achieved by wet oxidation at relatively low temperatures of 400–500 °C. The Fourier transform infrared absorption shows that the formation of SiH(O3), SiH(SiO2), SiH2(O2) bonds may be responsible to the stabilization of luminescence under the laser illumination. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1070-1073 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient electroluminescence behavior of a Au/porous silicon/silicon/aluminum structure is investigated by a doubly injected short voltage pulse method. It is found that the electroluminescence response of porous silicon diode is very similar to that of an ordinary p-n junction light-emitting diode. A delay time and a rise time at the "on'' side and a fall time at the "off'' side are observed. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schottky barrier and the porous silicon/p-Si heterojunction into the corrugated Si nanostructures, where the radiative recombination of carriers occurs. From the fall edge of electroluminescence transient response, the recombination lifetime of the injected carriers is found to be in the order of 30 ns. The major time constant of the diode structure is the delay time which ranges from 10−7 to 10−6 s and is determined by the quality of the Au/porous silicon contact.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1248-1250 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconductor quaternary alloys Zn1−xMgxSySe1−y were grown on GaAs substrates by molecular beam epitaxy. The crystal structures were determined from x-ray diffraction spectra. The Raman spectra of both perpendicular and parallel polarization geometries were measured. The following long-wavelength optical-phonon modes were identified: ZnSe-like TO and LO modes, and MgSe-like and ZnMgS-like LO modes. For the alloys with the same Mg composition x, the vibration frequencies of ZnSe-like TO and LO modes were observed to change linearly with S composition y for y〈0.5. The vibration frequency of the MgSe-like LO mode was also observed to change linearly with y for 0.1〈y〈0.5. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5967-5970 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light-emitting porous silicon is treated by the rapid thermal process at 900–1100 °C under NH3 environment. The infrared absorption spectra and Auger electron spectra show that the surface of porous silicon is covered with a nitride-containing layer. From the electron spin resonance, the density of dangling bonds is found to be quite low. The photoluminescence intensity shows a slight decay under the laser illumination and remains almost unchanged after three months storage in the ambient air. All of these results illustrate that the nitride could be an effective passivation film on the surface of porous silicon. © 1996 American Institute of Physics.
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