Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 1665-1667
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H*) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H* cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1310211
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