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  • 1
    Electronic Resource
    Electronic Resource
    Electrical properties of InPxOy -InP metal-insulator-semiconductor structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3130-3134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of n-type InP metal-insulator-semiconductor (MIS) structures have been investigated. As gate insulators, InPxOy layers are formed by a new method. In the method, a Px'Oy' layer is deposited on InP by evaporation of P2O5 powder. The reaction between the Px'Oy' layer and InP substrate yields an InPxOy layer. The InPxOy layers 500–1450 A(ring) thick exhibit high resistivities ρ and low dielectric dissipations D, i.e., ρ≈2×1015 Ω cm and D≤0.01 in the frequency range 0.02–100 kHz at room temperature. The hysteresis in the capacitance-voltage curves of a typical InP MIS structure is found to be less than 0.6 V and an ion-drift type. The interfacial properties of InP MIS structures are shown to be well explained by the statistical model in the conductance method. A typical value of the minimum surface state density is evaluated as 3.3×1011 cm−2 eV−1 at about 0.26 eV below the conduction-band edge. The distribution of the electron capture cross sections σ of surface states is also obtained, e.g., σ=1.6×10−16 cm2 at 0.4 eV below the conduction-band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348580
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of SiInxPyOz-InSb metal-insulator-semiconductor structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1506-1509 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of n-type InSb metal-insulator-semiconductor (MIS) structures have been investigated. As gate insulators, SiInxPyOz layers are formed on InSb by a new method. In the method, an In-SiOx' double layer is formed on the InSb (111)B surface by evaporation of SiO and In. Further, a Py'Oz' layer is deposited on the double layer. The reaction between a Py' Oz' layer and In-SiOx' double layer yields a SiInxPyOz layer. The SiInxPyOz layers exhibit high resistivities ρ, i.e., ρ≈6.5× 1015 Ω cm at 100 K and 1.0×1014 Ω cm at room temperature. The hysteresis in the capacitance-voltage (C-V) and conductance-voltage (G-V)curves of InSb MIS structures at 100 K is found to be less than 0.6 V and an injection type. The surface-state density in the MIS interface is evaluated by including the effects of the nonparabolicity of the conduction band and Fermi–Dirac statistics for electrons in InSb. A typical value of the minimum surface state density is observed as 8.3× 1011 cm−2 eV−1 at about 0.05 eV below the conduction-band edge. Further, the C-V characteristics of InSb MIS structures at room temperature are discussed by including the features of the narrow band-gap semiconductor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347240
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  • 3
    Electronic Resource
    Electronic Resource
    A high-current density and long lifetime ECR source for oxygen implanters : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 253-255 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-current ECR source has been developed for oxygen implanters for use in fabricating separation by implanted oxygen (SIMOX) substrates. The new source has the following features: (1) high-current density (150 mA/cm2) and large extracted current (more than 200 mA), (2) stable and long lifetime operation (more than 200 h), (3) high O+ ratio (more than 80%), and (4) low-divergence beam. The improved performance is obtained by incorporating the following: (1) Localized high-density plasma generation at the center of the plasma chamber. (2) A newly developed multilayer window to satisfy two requirements: efficient coupling of the microwave with high-density plasma and high resistance to high-speed backstream electrons. (3) Optimized combination of plasma chamber length and axial magnetic field distribution. (4) Sophisticated compact magnetic circuit that yields the optimum magnetic field for obtaining high-density plasma. An industrial-version ECR source was developed for production use on EATON NV-200 implanters. The source was installed on an NV-200 and used to implant oxygen ions to Si wafers. Good performance compared to a duopigatron source was obtained in terms of beam transport efficiency and reliability of source operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141311
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  • 4
    Electronic Resource
    Electronic Resource
    Ion cyclotron range of frequency heating experiments on the large helical device and high energy ion behavior : The 42nd annual meeting of the division of plasma physics of the American Physical Society and the 10th international congress on plasma physics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2139-2147 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion cyclotron range of frequency (ICRF) heating experiments on the Large Helical Device (LHD) [O. Motojima et al. Fus. Eng. Des. 20, 3 (1993)] achieved significant advances during the third experimental campaign carried out in 1999. They showed significant results in two heating modes; these are modes of the ICH-sustained plasma with large plasma stored energy and the neutral beam injection (NBI) plasma under additional heating. A long-pulse operation of more than 1 minute was achieved at a level of 1 MW. The characteristics of the ICRF heated plasma are the same as those of the NBI heated plasma. The energy confinement time is longer than that of International Stellarator Scaling 95. Three keys to successful ICRF heating are as follows: (1) an increase in the magnetic field strength, (2) the employment of an inward shift of the magnetic axis, (3) the installation of actively cooled graphite plates along the divertor legs. Highly energetic protons accelerated by the ICRF electric field were experimentally observed in the energy range from 30 to 250 keV and the tail temperature depended on the energy balance between the wave heating and the electron drag. The transfer efficiency from the high energy ions to the bulk plasma was deduced from the increase in the energy confinement time due to the high energy ions in the lower density discharge, which agrees fairly well with the result obtained by the Monte Carlo simulation. The transfer efficiency is expected to be 95% at an electron density of more than ne=5.0×1019 m−3 even in the high power heating of 10 MW. The accumulation of impurities, e.g., FeXVI and OV was not observed in high rf power and long pulse operation. The well-defined divertor intrinsic to LHD is believed to be useful in reducing the impurity influx. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354152
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  • 5
    Electronic Resource
    Electronic Resource
    High current ECR source for oxygen implantation: Life tests and comparison to duopigatron performance : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 294-296 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ECR source has been built for production use on Eaton's NV200 oxygen implanter. It can be retrofitted in place of the duopigatron normally used on that machine. This article reports results of 200 continuous hours of operation of the source, producing 95 mA of O+ ions, on a special test stand which emulates the injector of the NV200. Currents up to 200 mA at 45 kV were briefly obtained on this stand, the upper limit being set by thermal capacity of the beam dump. The ECR source was installed on an NV200 and used to implant wafers at 200 keV. Its performance is compared to that of the duopigatron source under similar conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141326
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  • 6
    Electronic Resource
    Electronic Resource
    Liquid impedance matching system for ion cyclotron heating (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2015-2022 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ion cyclotron heating has been established as one of the heating schemes in nuclear fusion research and its use in steady state plasma heating in various devices is being considered. The optimal technology for steady state ion cyclotron range of frequency heating has not been firmly established. This article reports on the liquid stub tuner which was newly developed in research and development activities on the large helical device. It demonstrated high performance in real use in experiments. Two different impedance-matching systems based on the liquid stub tuner are studied: one is a triple liquid stub tuner system and the other is a single stub tuner system with a liquid phase shifter. The characteristics of the two systems are compared from the points of view of how wide a frequency range is covered, and how great the reduction of the voltage in the transmission line is. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350636
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  • 7
    Electronic Resource
    Electronic Resource
    Resistive transition in TlBiSrCaCuO thin films in magnetic fields
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 210 (1993), S. 109-113 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(93)90014-H
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  • 8
    Electronic Resource
    Electronic Resource
    Increase in J"c of BiPbSrCaCuO superconductors by hot-pressing
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 162-164 (1989), S. 1261-1262 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(89)90683-7
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of magnetic field on transport current path in BiPbSrCaCuO granular superconductor
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 174 (1991), S. 335-339 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(91)91565-L
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  • 10
    Electronic Resource
    Electronic Resource
    A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer
    Amsterdam : Elsevier
    Solid State Electronics 34 (1991), S. 527-531 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(91)90157-T
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