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  • 1
    Electronic Resource
    Electronic Resource
    Excimer laser processing of indium-tin-oxide films: An optical investigation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6211-6219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: dc sputtered indium-tin-oxide films have been excimer laser irradiated at subablation threshold fluences (〈510 mJ/cm2). Optical characterization of irradiated products has been performed aiming at resolving the finer structure appearing in the IR–visible absorption spectra, as a function of laser fluence, and assigning such features to specific electronic defects which are produced upon irradiation. Four individual Gaussian-like contributions to absorption spectra are identified at 0.7, 1.0, 1.6, and 2.6 eV, the intensity of which is observed to vary with fluence. Being absent in the original films and emerging in optical spectra at fluences exceeding 300 mJ/cm2, the 2.6 eV contribution is most characteristic to excimer laser processing and is responsible for the darkening of the film. Thermal model calculations reveal that such defects are produced only upon melting and fast resolidification of the film. The evolution of the chemistry actually taking place in the film upon irradiation is followed by x-ray photoelectron spectroscopic analysis. A chemical approach to the production of such defects is proposed in which oxygen displacement in the atomic matrix leads to the formation of neutral ternary complexes of the type SnIn2O4. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360567
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  • 2
    Electronic Resource
    Electronic Resource
    Dynamics of long-pulse laser transfer of micrometer-sized metal patterns as followed by time-resolved measurements of reflectivity and transmittance (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2775-2781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced transfer of thin films is a simple single-step technique for surface patterning. In this paper the optimization principles and processes are outlined which led to successful application of the long-pulse laser transfer technique. The critical analysis of experiments on ns-pulse laser transfer of thin films of a variety of metals and the optimization study of the long-pulse laser transfer technique suggests that efficient deposition of high-quality patterns of micrometer dimensions can only be expected when using long laser pulses which not only produce ablation of the thin film pattern in solid phase but also maintain sufficient temperature during transfer and even on landing, to ensure film adherence. In order to identify and understand the different time-dependent processes determining the laser transfer, studies using optical and electron microscopy and static and time-resolved optical measurements were performed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360076
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  • 3
    Electronic Resource
    Electronic Resource
    Kr+ laser-induced chemical vapor deposition of W (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 673-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Kr+ laser-induced pyrolytic direct writing of W stripes by H2 reduction of WF6 has been investigated. The reproducibility of the process and the morphology and electrical properties of deposits depend heavily on the partial pressures of both WF6 and H2; the best results have been obtained with p(WF6)=5 mbar and 100 mbar≤p(H2)≤800 mbar. For a laser focus of 2w0=7 μm and laser powers between 30 and 200 mW, the widths of stripes varied between 1.5 and 15 μm with corresponding thicknesses between 0.1 to 3 μm. The width of stripes is independent of the scanning speed within the range 20 μm/s≤Vs ≤400 μm/s. The electrical resistivities of these stripes were about a factor of 1.3–2.3 larger than the bulk value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339767
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  • 4
    Electronic Resource
    Electronic Resource
    Deposition of micrometer-sized tungsten patterns by laser transfer technique (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3506-3508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple single-step technique for surface patterning is presented. It is shown that well-adhering micrometer-sized patterns of 100% coverage preserving the shape and dimensions of the ablated area can be deposited by ablating and transferring tungsten thin films in the form of single solid pieces using single pulses of peak power up to 100 mW and 100 μs–1 ms duration from a diode-pumped YAG laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111255
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  • 5
    Electronic Resource
    Electronic Resource
    LCVD of tungsten microstructures on quartz (1992)
    Springer
    Applied physics 54 (1992), S. 189-192 
    Details
    ISSN: 1432-0649
    Keywords: 42.60 ; 81.15 ; 82.00
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The pyrolytic laser-induced chemical vapor deposition (LCVD) of tungsten microstructures in the form of spots has been investigated. Fused quartz substrates and a mixture of WF6 and H2 have been employed in the experiments. Different shapes of spots related to different partial pressures of WF6 and H2 have been revealed. The results can qualitatively be described by a combination of surface reactions and gas-phase reactions resulting in tungsten deposition and surface etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00325499
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  • 6
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of metals at target temperatures close to the melting point (1999)
    Springer
    Applied physics 69 (1999), S. S617 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35.Bs; 81.15.Fg; 81.40.-z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Tin and bismuth metals are irradiated by KrF excimer laser pulses of fluences around 5 J/cm2. Supressing the formation of surface inhomogeneities on the target is achieved by increasing the target temperature to close to its melting point. The characteristics of surface structures developed on targets ablated at room temperature and heated to approximately 40 °C below the melting point of the respective metal, are presented. Optical microscopy is used to follow the changes in the surface morphology of the deposited films, and especially in the surface number density of particulates. Approaching the melting point of the tin target resulted in a threefold decrease in surface number density of particulates, while for bismuth only a slight decrease was obtained. In the latter case, the anisotropic growth properties of bismuth precluded the effective smoothing of certain domains on the target surface, even at temperatures close to its melting point.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051489
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  • 7
    Electronic Resource
    Electronic Resource
    Chemical analysis of a-CNx thin films synthesized by nanosecond and femtosecond pulsed laser deposition (1999)
    Springer
    Applied physics 69 (1999), S. S941 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Ba; 79.60.-i; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. An ArF excimer laser (22 ns, 193 nm) and a hybrid dye/excimer laser system (500 fs, 248 nm) are used to deposit amorphous carbon nitride films at room temperature by ablation of a graphite target in nitrogen atmosphere. The chemical composition and structure of the films is characterized by X-ray photoelectron spectroscopy. In the nanosecond case, the nitrogen content increases with reactive gas pressure up to 45 atomic %, while in the subpicosecond case it remains below 7 at. %. When processed with nanosecond pulses, the films’ nitrogen content steeply increases with fluence up to a maximum. The target-to-substrate distance has only minor influence on the amount of nitrogen incorporated into the films. The dependence of the carbon–carbon and carbon–nitrogen bond configurations on the processing parameters is also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051563
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  • 8
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of carbon nitride films by a sub-ps laser (2000)
    Springer
    Applied physics 70 (2000), S. 9-11 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Ba; 79.60.-i; 81.15.Fg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. CNx (0.01〈x〈0.06) films were grown from a graphite target by pulsed laser deposition in a low-pressure nitrogen environment at room temperature, using a sub-psultraviolet laser. With increasing nitrogen pressure from 3×10-2 to 0.6 mbar the nitrogen content of the films increases monotonously, as determined by X-ray photoelectron spectroscopy. Raman spectroscopy reveals that the films consist predominantly of highly amorphous carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050003
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  • 9
    Electronic Resource
    Electronic Resource
    Pulsed laser processing of Ge/Se thin film structures (1991)
    Springer
    Applied physics 52 (1991), S. 273-279 
    Details
    ISSN: 1432-0630
    Keywords: 42.60 K ; 81.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The comparison between results of a systematic experimental study on Q-switched ruby laser processing of supported thin Ge/Se bilayer structures and model calculations permits us to unfold the rather complicated events into elementary steps. Depending on the sequence of the elemental layers and the absorbed fluence, compound synthesis, total or partial ablation of one of the constituents or the compound formed, and simultaneous transfer of the ablated material onto a separate substrate in close proximity is possible with a single laser pulse. The striking agreement between experimental findings and model calculations indicates the validity of the simple thermal model applied. The results establish a novel, inherently simple, single-step technique for local deposition of compound films from stacked elemental layers as a source onto any substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324591
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  • 10
    Electronic Resource
    Electronic Resource
    Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser (1993)
    Springer
    Applied physics 57 (1993), S. 181-185 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00331442
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