ISSN:
1432-0630
Keywords:
78.30.Gt
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Raman scattering spectroscopy is used to study the elastic stress distribution in the epitaxial silicon operating areas in the vicinity of planar getter areas, the latter being created by previous ion implantation of the substrate. Data concerning the effect of the operating element size and the dose of implantation into the getter area are obtained. The results are compared with those of X-ray topographic analysis of the structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324011
Permalink