Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 1501-1503
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on investigations of the ambipolar diffusion coefficient in GaAs n-i-p structures in which the electron density in the n channel is varied. The ambipolar diffusion coefficient was determined by time-resolved diffusion experiments of the Shockley–Haynes type. The dependence of the ambipolar diffusion coefficient on the varying carrier density is in excellent agreement with the theory of ambipolar diffusion in n-i-p-i systems. In the investigated sample, the ambipolar diffusion coefficient reaches a maximum value of 16 300 cm2/s. Although the ambipolar diffusion constant declines with decreasing carrier density, it is in a wide range of the carrier density more than two orders of magnitude enhanced compared to bulk materials. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119948
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