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  • 1
    Monograph available for loan
    Monograph available for loan
    Cambridge, Mass. : M.I.T. Press
    Call number: 7272
    Type of Medium: Monograph available for loan
    Pages: XI, 280 S. : Ill., graph. Darst.
    Location: Upper compact magazine
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 1773-1774 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 8379-8382 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The π bond orientation of ethylene and propylene on the clean and atomic oxygen covered Ag(110) surfaces has been determined with near-edge x-ray absorption fine-structure (NEXAFS) measurements. The π system of ethylene is tilted 20±5° and 18±5° from the surface normal for ethylene on the clean and atomic oxygen covered surfaces, respectively. The tilt angle of the π system is 20±5° on the clean surface and 31±5° on the atomic oxygen covered surface. On both the clean and atomic oxygen covered surface, the carbon–carbon double bond in ethylene and propylene appears to form a π-donor type bond with the Ag(110) surface.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 5316-5322 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The orientation of allyl alcohol (CH2=CHCH2OH), propargyl alcohol (CH 3/4 CCH2OH), and their surface alkoxy groups has been examined on Ag(110) using near edge x-ray absorption fine structure (NEXAFS) measurements. The planes containing the π* orbitals of allyl alcohol and its alkoxy species, allyloxy (CH2=CHCH2O−), are tilted 26±4° and 32±5° from the surface normal, respectively. Allyl alcohol itself shows no azimuthal ordering, but the π* orbital in allyloxy is azimuthally oriented 33±15° from the close-packed direction ([11¯0] azimuth). Propargyl alcohol is randomly oriented on the Ag(110) surface. Its alkoxy group, propargyloxy (CH 3/4 CCH2O−), is strongly oriented with the triple bond axis parallel to the plane of the surface and directed along the [001] azimuth, perpendicular to the troughs. The position of the σ* resonances indicate that no loss of the allylic hydrogen has occurred and that the double and triple bonds are slightly, but not significantly, perturbed from their normal gas phase bond lengths.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 4012-4023 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The orientation, absolute coverage and core-electron binding energies of furan (C4H4O) and 2,5-dihydrofuran (C4H6O) on Ag(110) have been measured using near edge x-ray absorption fine structure and x-ray photoelectron spectroscopy. Both furan and 2,5-dihydrofuran (2,5-DHF) are tilted 22±7° from the plane of the surface for both submonolayer and monolayer coverages. The saturation monolayer coverages on the Ag(110) surface of 0.45±0.07 ML for furan and 0.41±0.06 ML for 2,5-DHF are consistent with expectations based on van der Waals radii. The C(1s) binding energies for a monolayer of furan on Ag(110) are 284.8 and 286.2 eV, while the C(1s) binding energies for 2,5-DHF are 285.1 and 286.6 eV. The O(1s) binding energies are 532.8 and 533.8 eV for furan and 2,5-DHF monolayers, respectively. The onset of excitations from C(1s) levels to the continuum lies well above the Fermi level due to the weak bonding interactions with the surface.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 916-922 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: New class of integrable Hamiltonian systems is obtained as systems directly defined over Jacobi varieties. This approach enables one to establish a link between associated discrete and continuous systems. In particular, regular procedure is found for the discretization of the integrable continuous systems. Hierarchies of the continuous systems associated with Toda lattices, relativistic Toda lattices, and Volterra lattices are found and studied.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5040-5044 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent Hall effect, optical admittance spectroscopy, and optical absorption measurements of semi-insulating bulk 4H–SiC are reported. Both intentionally vanadium doped material and commercial grade semi-insulating material were investigated. The carrier concentration versus inverse temperature results from Hall effect measurements up to 1000 K indicated the samples were dominated by one of two deep levels near midgap. In addition to the deep donor level of substitutional vanadium, Ec−1.6 eV, we observed another level at Ec−1.1 eV in some samples, indicating that levels other than the vanadium donor can pin the Fermi level in semi-insulating SiC. Optical admittance measurements on the semi-insulating material indicate the presence of levels at Ec−1.73 and 1.18 eV that were previously observed in conducting samples with this technique and we attribute these levels to the same defects producing the 1.1 and 1.6 eV levels seen by Hall effect. Secondary ion mass spectroscopy measurements of dopant and impurity concentrations are reported. Even though vanadium is present in all of these samples, along with other impurities we are at present unable to definitively identify the 1.1 eV level. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 95 (1973), S. 4483-4486 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 699-709 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium ion implantation was used to form high acceptor concentrations in GaAs1−xSbx (0.47≤x≤0.49) epilayers on semi-insulating InP substrates. Two implant doses were tested: Q0=5×1014 cm−2 and Q0=1×1015 cm−2 at an implant energy of E=50 keV. Electrochemical profiling and secondary-ion-mass spectrometry (SIMS) results confirm acceptor concentrations of NA≥1×1019 cm−3 and NA≥2×1019 cm−3 within 1000 A(ring) of the GaAs1−xSbx surface for the lower and higher implant dose, respectively. These results provide a p+ surface layer for low-resistance ohmic contact to GaAsSb-based devices. Optical microscopy and SIMS demonstrate rapid thermal anneal (RTA) temperature limits of T=650 °C for Q0=5×1014 cm−2 and T=600 °C for Q0=1 ×1015 cm−2. The temperature limitation is imposed by destabilization of the GaAs1−xSbx surface through Ga sputtering during implantation, and Ga and As outdiffusion during RTA. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4123-4130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous carbon (a-C) and amorphous hydrogenated carbon (a-C:H) films are produced by 248 nm pulsed laser ablation of graphite and polycarbonate targets in high vacuum conditions. Plasma plumes generated by target irradiation with different laser fluences are investigated with laser induced fluorescence spectroscopy and an electrostatic probe. Ions of C2+ with kinetic energies of several hundred eV are detected in the leading edge of the plasma plumes from both targets. These energetic species are proposed to be responsible for the formation of film structures corresponding to diamond-like carbon (DLC), as it is found from electron-energy-loss spectroscopy (EELS) and Raman investigations of 0.5 μm films deposited onto steel substrates. The validation of a laser wavelength/fluence region for DLC formation found earlier for graphite targets is discussed and expanded to polycarbonate targets. An increase in laser fluence leads to higher percentages of sp3 bonds in the a-C and a-C:H films. For the a-C:H films, the incorporation of large molecular conglomerates ejected from polycarbonate targets results in the formation of unique heterogeneous structures revealed from scanning electron microscopy (SEM) studies. The embedded conglomerates cause a decrease in the a-C:H film hardness to 15 GPa, in comparison to 60 GPa for the a-C films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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