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  • 1
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    In:  EPIC3Breaking the barriers to the free flow of information : 16th Annual Conference of the International Association of Marine Science Libraries and Information Centers, Seattle, Washington, 2 5 October 1990. / editors, Elizabeth Fuseler McDowell and Stephen W, pp. 51-72, ISSN: 8755-6332
    Publication Date: 2019-07-17
    Repository Name: EPIC Alfred Wegener Institut
    Type: Conference , notRev
    Format: application/pdf
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  • 2
    Publication Date: 2021-05-19
    Description: The Sixth Session of the IODE Group of Experts on Marine Information Management (GE-MIM) took place 31 May-03 Jun 1999 in Silver Spring, Maryland, USA. After a successful intersessional period of three years, there were some major accomplishments to be acknowledged : •The excellent IOC World Wide Website, which will continue under MIM to be constantly maintained using state of the art technology tools, the inclusion of dataset and information databases , directories and the IOC Electronic Library providing a catalogue and full text of IOC publications. •The attainment of 10,000 entries on the Global Directory of Marine and Freshwater Professionals (GLODIR) with activity directed at regional input (see IODE XVI, Doc 19) •The continued success of the East African regional information network, RECOSCIX-WIO and imminent start of RECOSCIX-CEA for West Africa. •The provision of Ariel software to enable fast provision of information using electronic document delivery. •The support to LIS colleagues in Developing Countries to attend training courses, workshops and professional conferences organised by IAMSLIC and EURASLIC •The growing interaction between the data and information communities under the aegis of IODE particularly on metadata and field definition, to progress the MEDI as a standard for dataset inventories.
    Description: Supported by IOC/IODE
    Description: Lisbon, Portugal, 30 October - 9 November 2000
    Description: Published
    Description: Sixteenth Session
    Keywords: Management ; Oceanography ; Information services ; Management ; Oceanography
    Repository Name: AquaDocs
    Type: Non-Refereed
    Format: 3
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  • 3
    Publication Date: 2021-05-19
    Description: The Sixth Session of the IODE Group of Experts on Marine Information Management (GE-MIM) took place 31 May-03 Jun 1999 in Silver Spring, Maryland, USA. After a successful intersessional period of three years, there were some major accomplishments to be acknowledged : •The excellent IOC World Wide Website, which will continue under MIM to be constantly maintained using state of the art technology tools, the inclusion of dataset and information databases , directories and the IOC Electronic Library providing a catalogue and full text of IOC publications. •The attainment of 10,000 entries on the Global Directory of Marine and Freshwater Professionals (GLODIR) with activity directed at regional input (see IODE XVI, Doc 19) •The continued success of the East African regional information network, RECOSCIX-WIO and imminent start of RECOSCIX-CEA for West Africa. •The provision of Ariel software to enable fast provision of information using electronic document delivery. •The support to LIS colleagues in Developing Countries to attend training courses, workshops and professional conferences organised by IAMSLIC and EURASLIC •The growing interaction between the data and information communities under the aegis of IODE particularly on metadata and field definition, to progress the MEDI as a standard for dataset inventories. (see IOC/IODE XVI/19)
    Description: Supported by IOC/IODE
    Description: Lisbon, Portugal, 30 October - 9 November 2000
    Description: Published
    Description: Sixteenth Session
    Keywords: Management ; Information services ; Management ; Oceanography
    Repository Name: AquaDocs
    Type: Non-Refereed
    Format: 4
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  • 4
    Publication Date: 2021-05-19
    Description: Two Sessions of the IODE Group of Experts on Marine Information Management (GE-MIM) were relevant to the IODE-XVI/IODE-XVI inter-sessional period: The Fourth Session (Athens, Greece, 17-19 January 1996 i.e. just prior to IODE-XV) and the Sixth Session (Silver Spring, Maryland, USA, 31 May – 3 June 1999). The main services and products recommended for development by these Sessions were (extracted from the GEMIM-V and GEMIM-VI Action Plans): FIFTH SESSION Setting up of GEMIM listserv  Development of a full catalogue of IOC publications Standard IOC web page structure for Member States IOC page  Development of Global Directory of Marine Institutions and Scientists  MIM Publication Series  Directory of training opportunities in MIM SIXTH SESSION  IOC catalogue of publications (cont. From GEMIM-V)  Development of ‘IOC web site template’ for Member States web sites  Identification of Integrated Library Management System software  Further development of GLODIR  Identification and detailed terms of reference for MIM Training Modules  Provision of basic library training manual  MIM website development Directory of training opportunities Clearing House (cont. from GEMIM-V) IOC CD-ROM
    Description: Supported by IOC/IODE
    Description: Lisbon, Portugal, 30 October – 9 November 2000
    Description: Published
    Description: Sixteenth Session
    Keywords: Information services ; Information services
    Repository Name: AquaDocs
    Type: Report , Non-Refereed
    Format: 28
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1799-1804 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modification of GaAs by Si+-ion implantation is an important process for selective doping of the material. Defects caused by the implantation process often lead to incomplete electrical activation, and annealing procedures are used to recover the crystal quality. Results are presented of variable-energy positron (VEP) and cross-sectional transmission electron microscopy (XTEM) studies of a series of GaAs samples implanted with moderate to high fluences of 3×1013, 3×1014, and 1×1015 Si+ ions cm−2. Samples were irradiated at room temperature, and studied both before and after thermal annealing for one hour at 850 °C. In all cases XTEM results show a high density of small extrinsic dislocations after implantation, and VEP shows high concentrations of point (vacancy type) defects. Annealing leads to a decrease in the point-defect concentration in the lowest-fluence sample, but both XTEM and VEP confirm the formation of macroscopic (i.e., (approximately-greater-than)20 A(ring) diameter) voids following annealing. These data are discussed in the context of microscopic models for defect formation and migration.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5991-5996 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The charge states of divacancies induced by 5 MeV self-implantation of doped silicon were investigated by positron annihilation methods. For low doping concentrations, results were found to be in agreement with the predictions of Fermi statistics. For the case of heavily boron-doped silicon (nB=1×1019 cm−3) an anomalous single-negative divacancy charge state was detected. We attribute this to the introduction of new levels in the band gap, due to the capture of boron by divacancies, resulting in a boron-divacancy complex. Detailed analysis of positron annihilation spectra suggests that the boron does not reside on a nearest-neighbor site to the divacancy. Isothermal annealing experiments yield activation energy of 0.9±0.1 eV for migration of this defect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7685-7691 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects and their annealing behavior in boron implanted silicon have been studied using positron annihilation spectroscopy (PAS), ion channeling, nuclear reaction analysis, and transmission electron microscopy. Silicon wafers were implanted with 80 keV boron ions to fluences from 1012 to 1015 cm−2. Furnace annealing or rapid thermal annealing (RTA) of the implanted Si samples was conducted to temperatures in the range 750–950 °C in a N2 ambient. For as-implanted samples, the defect profiles extracted from PAS spectra were found to extend beyond the implanted boron distribution given by TRIM calculations. The Sdefect/Sbulk values increased monotonically with increasing boron fluences. For boron fluences ≥1013 cm−2,Sdefect/Sbulk was found to be 〉1.04 (the characteristic value for divacancy), while Sdefect/Sbulk was found to be 〈1.04 for a boron fluence of 1012 cm−2. After annealing at 750 °C, all B-implanted samples had similar S-parameter values in the near-surface region, while in the deep region the S values for high B fluences (φ≥1014 cm−2) were found to be lower than those for low B fluences (φ≤1013 cm−2). Annealing at 950 °C did not change the S-parameter data for the lowest boron fluence (1012 cm−2), but caused a slight increase of the S parameters in the deep region for other boron fluences. RTA at 750 °C shows that major defects in B-implanted Si are annealed out within the first 3 s. An interesting transient annealing behavior is observed in which the S value decreases in the initial annealing stage, and then increases to a saturating value after prolonged annealing. Possible effects of electric fields resulting from the electrical activation of implanted boron on the behavior of positron annihilation line shapes after annealing are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Fiscal studies 6 (1985), S. 0 
    ISSN: 1475-5890
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9022-9028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of synthetic fused silica have been implanted at room temperature with silicon ions of energy 1.5 MeV. Fluences ranged from 1011 to 1013 cm−2. Samples were probed using variable-energy positron annihilation spectroscopy. The Doppler-broadening S parameter corresponding to the implanted region decreased with increasing fluence and saturated at a fluence of 1013 cm−2. It is shown that the decrease in the S parameter is due to the suppression of positronium (Ps) which is formed in the preimplanted material, due to the competing process of implantation-induced trapping of positrons. In order to satisfactorily model the positron data it was necessary to account for positron trapping due to defects created by both electronic and nuclear stopping of the implanted ions. Annealing of the 1013 cm−2 sample resulted in measurable recovery of the preimplanted S parameter spectrum at 350 °C and complete recovery to the preimplanted condition at 600 °C. Volume compaction was also observed after implantation. Upon annealing, the compaction was seen to decrease by 75%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2568-2574 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron annihilation spectroscopy has been combined with Auger electron depth profiling, elastic recoil detection, Fourier-transform infrared spectroscopy, and capacitance-voltage measurements to study silicon nitride films grown by plasma-enhanced chemical vapor deposition. For silicon-rich films the positron lineshape parameter is very close to that of undefected silicon, consistent with a strong hydrogen passivation effect. With increasing nitrogen content in the films, there is an increase in the number of unpassivated vacancy complexes available to trap positrons prior to annihilation. Detailed analysis gives a measure of the electric field induced in the silicon substrate by the presence of charge trapped in the silicon nitride near the interface. These results agree qualitatively with electrical measurements. Both the charge and the electric field are found to decrease with increasing nitrogen content. Incorporation of a small amount of oxygen in the films leads to a suppression of the feature in the positron spectrum associated with vacancy complexes in favor of a spectrum typical of oxygen related defects. © 1995 American Institute of Physics.
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