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  • 1
    Electronic Resource
    Electronic Resource
    New Species of Gregarines from Millipedes of Mysore State, India (1961)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 8 (1961), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Five species of millipedes under investigation revealed the presence of six species of gregarines, five of which are new. A new method for the study of development of the gametocyst is described. A list of the millipedes and their gregarine parasites is given below:
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.1961.tb01200.x
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  • 2
    Electronic Resource
    Electronic Resource
    Detection of surface states in GaAs and InP by thermally stimulated exoelectron emission spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5597-5599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy distribution and relative densities of electronically active surface defects have been studied using thermally stimulated exoelectron emission (TSEE) spectroscopy. This novel and relatively simple technique has high sensitivity for detecting the surface states which are difficult to assess by other techniques. Here this technique is successfully used for detecting the pinned positions of the Fermi level in n-GaAs and n-InP which are, respectively, 0.91 and 0.43 eV below the conduction bands corresponding to 2Eg/3 and Eg/3 as expected. Antisite and oxygen related defects in these semiconductors are also identified at the surface. The relative TSEE peak intensities correlate very closely to the reported surface recombination velocities for these materials which are two to three orders of magnitude higher for GaAs. The effect of chromium on the surface states in these semiconductors, studied using semi-insulating GaAs, showed partial passivation of the surface defects in semi-insulating GaAs resulting in unpinning of the Fermi levels. Fe doped InP did not, however, show any sign of dopant induced deep levels. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366420
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  • 3
    Electronic Resource
    Electronic Resource
    Surface modification of n-GaAs by 50 MeV silicon ions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1962-1966 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An effective passivation of the surface states in n-GaAs has been achieved by high energy (50 MeV) silicon ion irradiation at a fluence of 1×1013 ions cm−2. The effect of passivation on the nature of defects has been studied by the technique of thermally stimulated exoelectron emission (TSEE) measurements. Consequently an enhancement in the intensity of the band edge, photoluminescence (PL) has also been noticed. The results of TSEE and PL measurements are augmented by surface analysis using x-ray photoelectron spectroscopy. An effective migration of silicon was observed from the buried layer towards the surface by radiation enhanced outdiffusion process. A stable passivating layer of silicon dioxide was found on GaAs surface which has been accounted for the enhancement in the PL intensity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366922
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  • 4
    Electronic Resource
    Electronic Resource
    Investing in Research and Education versus Commodity Programs: Implications for Agricultural Productivity (1999)
    Springer
    Journal of productivity analysis 12 (1999), S. 77-94 
    Details
    ISSN: 1573-0441
    Keywords: Agricultural productivity ; Public and private R and D ; Education ; Commodity programs ; Cointegration ; Error Correction model
    Source: Springer Online Journal Archives 1860-2000
    Topics: Economics
    Notes: Abstract The long-term impact of research, education, and various government support programs on U.S. agricultural productivity was analyzed using an error correction model. Results indicate that the proposed reduction in commodity program expenditures (e.g. 1996 Farm Bill) is unlikely to reduce agricultural productivity. Results suggest that shifting public funds from commodity programs to education and research would raise U.S. agricultural productivity. Our estimates of long-term rates of return to public research are lower than those from most previous, perhaps due to our improved model specification, but are high enough to justify continued public investments to raise productivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007855224376
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  • 5
    Electronic Resource
    Electronic Resource
    Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 575-578 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 4H-SiC samples implanted with 1020 Al were annealed at various temperatures with aBN/AlN or graphite cap, and there morphological, structural, and electrical properties arecompared. No blow holes were observed in either cap. Some Si out-diffuses through the graphitecap which results in a rougher surface and a structurally modified region near the surface. TheBN/AlN cap annealed at 1800ºC cannot be readily removed, whereas the graphite cap can beremoved easily after any annealing temperature. The sheet resistances for both types of sampleswere about the same
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.575.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 847-850 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 4H-SiC samples implanted at 600°C with 1020 cm-3 of B or B and C to adepth of ~0.5 μm, capped with (BN/AlN), and annealed at temperatures ranging from1400°C – 1700°C were studied using variable temperature cathodoluminescence. Newemission lines, which may be associated with stacking faults, were observed in thesamples co-implanted with B and C, but not in the samples implanted only with B.For both the B and B and C co-implanted samples, the intensity of the line near 3.0 eVdecreases with increasing annealing temperature, TA, and this line is not observedafter annealing at 1700°C. The D1 defect related emission lines are observed in theluminescence spectra of all samples and their relative intensities seem to vary with theimplantation-annealing schedule and excitation conditions
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.847.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Variations in the Effects of Implanting Al at Different Concentrations into SiC (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 831-834 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: SiC samples implanted at 600°C with 1018, 1019, or 1020 cm-3 of Al to a depth of ~ 0.3μm and annealed with a (BN)AlN cap at temperatures ranging from 1300 – 1700°C were studied.Some of the samples have been co-implanted with C or Si. They are examined using Hall, sheetresistivity, CL, EPR, RBS, and TEM measurements. In all instances the sheet resistance is largerthan a comparably doped epitaxial layer, with the difference being larger for samples doped tohigher levels. The results suggest that not all of the damage can be annealed out, as stable defectsappear to form, and a greater number or more complex defects form at the higher concentrations.Further, the defects affect the properties of the Al as no EPR peak is detected for implanted Al, andthe implanted Al reduces the AlSi peak intensity in bulk SiC. CL measurements show that there is apeak near 2.9941 eV that disappears only at the highest annealing temperature suggesting it isassociated with a complex defect. The DI peaks persist at all annealing temperatures, and arepossibly associated with a Si terminated partial dislocation. TEM analyses indicate that the defectsare stacking faults and/or dislocations, and that these faulted regions can grow during annealing.This is confirmed by RBS measurements
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.831.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    The D〈sub〉I〈/sub〉 Defect is Associated with a Stacking Fault? (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 287-290 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Using TEM we show that defective regions are formed in SiC by ion implantation, andthat some of the regions grow at the expense of others. Using HRTEM we show that these regionscontain a large number of stacking faults. It is proposed that these stacking faults are Frankintrinsic stacking faults formed by condensation of divacancies, and it is this defect that isassociated with the DI defect
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.287.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial TaC Films for the Selective Area Growth of SiC (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 183-186 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000ºC, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.183.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Substitutions of copper(II) carboxylates with Schiff bases (1997)
    Springer
    Transition metal chemistry 22 (1997), S. 164-166 
    Details
    ISSN: 1572-901X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Substitutions of anhydrous copper(II) acetate with higher carboxylic acids in an equimolar ratio in refluxing toluene yield monosubstituted soluble derivatives, which undergo substitutions with Schiff bases (derived from salicylaldehyde and aniline or p-chloroaniline) to give mixed complexes of the general formula [Cu(OOCR)- (SB)] (HSB = Schiff base and R = C13H27, C15H31, C17H35 and C21H43). The products have been characterized by elemental analyses, electrical conductance, magnetic moment and spectral (i.r. and electronic) data. Cryoscopic molecular weight determinations indicate that the derivatives are dimers. The complexes are e.p.r. silent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018423331794
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