ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SiO2 layers were deposited by reactive d.c ion sputtering (using 1keV Ar+ ion gun) from ahigh purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was4.7·10-9mbar, and the substrate temperature was held at 550 °C. The argon partial pressure duringion gun operation was 1·10-3mbar. Structural characterization of the films was performed byRutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-raydiffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient forthe deposition of silica at an oxygen partial pressure of 2·10-4mbar and an electrical current on thetarget of 5.5mA
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.518.149.pdf
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