ISSN:
1057-9257
Keywords:
semiconductor
;
III-V materials
;
GaSb
;
nanocrystals
;
SEM
;
TEM
;
electron diffraction
;
dehalosilylation
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
The reaction between GaCl3 and Sb(SiMe3)3 in a 1:1 mole ratio at 110°C in toluene leads to gallium antimonide, GaSb, which has been characterised by electron diffraction studies and EDX and elemental analyses. Microscopy studies (SEM and TEM) show the formation of nanocrystals with a predominant crystal size of 20-30 nm.
Additional Material:
2 Ill.
Type of Medium:
Electronic Resource
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