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  • 1
    Electronic Resource
    Electronic Resource
    Real-space transfer oscillations in coupled quantum wires (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3602-3604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for nonlinear parallel transport in GaAs/n-AlxGa1−xAs quantum wires coupled via an external load circuit is developed. It takes into account the nonlinear dynamics of electric-field induced real-space electron transfer from GaAs to AlGaAs and delayed dielectric relaxation of the interface potential barrier. Quantum size effects are considered in the form of confining potentials. In the case of two symmetric quantum wires symmetric and asymmetric self-generated current oscillations of several hundred GHz are predicted. The coupling of two nonsymmetric wires yields quasi-periodic oscillations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354496
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  • 2
    Electronic Resource
    Electronic Resource
    Criteria for stability in bistable electrical devices with S- or Z-shaped current voltage characteristic (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7352-7357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic devices exhibiting bistability in the current-voltage characteristics are considered from a unified viewpoint. We obtain simple relations for the stability of the different branches in the current-voltage characteristics. Criteria for oscillatory instabilities are discussed, and special conclusions for elements with S- or Z-shaped characteristics are drawn. The stabilization of the middle branch of the double-barrier resonant-tunneling diode in a circuit with effectively negative capacitance and negative resistance is derived in a simple way. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360384
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3376-3380 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bistable current–voltage characteristics caused by competition of tunneling through and field-enhanced thermionic emission across a single barrier are investigated in an n−-GaAs/Al0.34Ga0.66As/n+-GaAs structure. The S-shaped part of the characteristic persists in the whole temperature regime between 4.2 and 300 K in accordance with theoretical predictions. The delay and switching times of the transition from the low- to the high-conducting state are investigated as a function of the applied voltage and compared with simulations. The observed timescales are much longer than expected from theory, which indicates the presence of additional deep centers or interface states. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363251
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  • 4
    Electronic Resource
    Electronic Resource
    Novel mechanism of a real-space transfer oscillator (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1277-1279 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mechanism for self-generated current oscillations in modulation-doped semiconductor heterostructures under parallel conduction is proposed. It is based upon the nonlinear dynamics of real-space electron transfer and delayed dielectric relaxation of the interface potential barrier resulting from the space charge in the doped AlGaAs layer. From our simulations we predict current oscillations in the 20–80 GHz range under dc bias.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104335
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  • 5
    Electronic Resource
    Electronic Resource
    Lowering of grain-boundary barrier heights by grain curvature (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1434-1439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented for the potential barrier height at grain boundaries in polycrystalline semiconductors, which takes into account a curved grain boundary under equilibrium and nonequilibrium conditions, assuming flat quasi-Fermi levels. An analytical method to calculate the reduction of the potential barrier due to the grain curvature, without using the depletion approximation, is developed and applied to compute the barrier lowering as a function of the bulk doping concentration, interface state density, and the grain radius in silicon. The barrier height can vary along a grain boundary, due to different local curvatures, being lowest at corners of grains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337322
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  • 6
    Electronic Resource
    Electronic Resource
    Carrier transport and intersubband population inversion in coupled quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1089-1091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We theoretically study the possibility of achieving intersubband population inversion in coupled GaAs quantum wells, taking into account the relevant physical mechanisms of resonant tunneling and intersubband emission-absorption processes. Two coupled quantum well structures having intersubband resonant wavelengths of 10 and 60 μm are considered. We find that, in the case of an operating wavelength of 60 μm, intersubband population inversion is achievable at acceptable injection current densities even for room-temperature operation. However, achievement of intersubband population inversion is significantly more difficult at the shorter wavelength. The temperature and carrier transit time dependence of intersubband population inversion are also calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109815
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  • 7
    Electronic Resource
    Electronic Resource
    Multistability of the current-voltage characteristics in doped GaAs-AlAs superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1808-1810 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric-field domain formation in doped semiconductor superlattices leads to sharp discontinuities in the current-voltage (I-V) characteristic. The successive expansion of the high-field region with increasing bias voltage through the periodic heterostructure manifests itself in a regular sequence of stable current branches. The current shows a complex hysteretic behavior. We observe two, three, and more stable current levels for fixed bias voltages. Calculations of the I-V characteristic based on a microscopic model support the experimentally observed multistability. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112850
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  • 8
    Electronic Resource
    Electronic Resource
    Oscillatory instability in the heterostructure hot-electron diode (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1702-1704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical electrical transport in the heterostructure hot-electron diode is considered theoretically. We present a simple dynamical model which consistently explains the measured S-shaped negative differential conductivity in the current-voltage characteristics. The model predicts a new type of self-sustained 60 GHz voltage oscillations between tunneling and thermionic emission if the sample is driven by a dc voltage source having a resistor in series and a capacitor in parallel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106223
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  • 9
    Electronic Resource
    Electronic Resource
    Equivalent circuit model for current filamentation in p-i-n diodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 105-107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In semiconductor materials with S-shaped negative differential conductivity, pattern formation due to current filament formation is observed. We present experimental results of filamentation in Si p-i-n diodes and propose an equivalent circuit to describe the observed structures. The electrical circuit is based upon numerical results of electrical field−current density characteristics in p-i-n diodes. From this model we derive an equation, which describes the current density distribution in the device as a solitary structure. The proposed analytical solution, which is well known from the theory of pulse propagation in nerve fibers, leads to expressions for the peak current density and the width of a filament.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105559
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  • 10
    Electronic Resource
    Electronic Resource
    Electric field domains in intentionally perturbed semiconductor superlattices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 626-628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations based on a rate equation model for high-field transport through a doped semiconductor superlattice are presented for the case that one barrier is chosen significantly wider than the others. The distinct impact of that local perturbation on the overall shape of the current–voltage characteristic is discussed and related to the spatial field distribution. The measured current–voltage characteristic of a superlattice, which was intentionally grown with one thicker barrier, confirms the strong asymmetry predicted by the model calculations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117928
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