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  • 1
    Electronic Resource
    Electronic Resource
    Negative electron affinity based vacuum collector transistor (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3042-3044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the operation of a vacuum collector–semiconductor transistor based on negative electron affinity cold cathode technology. The unique aspect of this transistor is that the collector is separated from the emitter-base junction by a vacuum drift region, yielding an intrinsic collector capacitance which is an order of magnitude lower than that for conventional bipolar transistors. The collector charging time is thus proportionally smaller. Transport in the vacuum drift region is truly ballistic and depends only on the collector-base bias, enabling a wide range of device concepts which are impossible or impractical in conventional transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350990
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  • 2
    Electronic Resource
    Electronic Resource
    Optical waveguide intensity modulators based on a tunable electron density multiple quantum well structure (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With a recently developed semiconductor heterostructure it has become possible to tune continuously the electron density in multiple quantum wells. Here we demonstrate the first electro-optic waveguide intensity modulators based on this concept. We achieve a 22 dB on/off ratio for 9 V applied at 1.54 μm wavelength in a rib waveguide electroabsorption modulator. Electrorefractive devices include a waveguide Mach–Zehnder interferometer with an active length 650 μm operating at 1.58 μm wavelength with 5.4 V half-wave voltage. We show that the operating voltage can be further reduced by operating the Mach–Zehnder modulators in push-pull configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103032
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  • 3
    Electronic Resource
    Electronic Resource
    High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1863-1865 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high quality In0.53Ga0.47As Schottky barrier diode fabricated by using a thin graded superlattice (SL) of In0.53Ga0.47As/In0.52Al0.48As grown by molecular beam epitaxy is reported for the first time in this letter. The effective Schottky barrier heights of ∼0.71 and ∼0.60 eV were obtained for the Au- and Cr-Schottky contacts, respectively. Excellent current-voltage and capacitance-voltage characteristics were obtained for these diodes. The graded InGaAs/InAlAs SL structure allows one to circumvent the problem of carrier pileup associated with abrupt heterostructures, and hence is advantageous for forming Schottky contacts on InGaAs for high-speed optoelectronic device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101261
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  • 4
    Electronic Resource
    Electronic Resource
    Multiple quantum well passive mode locking of a NaCl color center laser (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1203-1205 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using multiple quantum well (MQW) saturable absorbers, we passively mode locked a NaCl color center laser to produce transform-limited, pedestal-free pulses with τ as short as 275 fs and peak power as high as 3.7 kW. Because of exciton ionization with a 200±30 fs time constant, the MQW shows a fast absorption recovery that is comparable to our pulse widths. This fast component plays a major role in pulse shaping and may limit the pulse width. We also show that the wavelength for the short pulses can be tuned from 1.59 to 1.7 μm by choosing MQWs with different band gaps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100753
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  • 5
    Electronic Resource
    Electronic Resource
    Single heterostructures for optical transport experiments (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1815-1817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a new GaAs/AlxGa1−xAs single heterostructure, which allows local optical injection of a one-component confined plasma. The heterojunction is placed in the undoped region of a p-i-n structure, which provides a high built-in electric field for the separation of injected electrons and holes, as well as for the two-dimensional confinement of electrons. A time-of-flight measurement of the majority-electron drift velocity at room temperature is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98532
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  • 6
    Electronic Resource
    Electronic Resource
    High-resistance regions produced in an (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3290-3292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistance, Hall mobility, and carrier concentration as a function of He ion dose have been measured across the In1−x−yGaxAlyAs system. Starting with heavily doped n-type epitaxial layers (n∼1018 cm−3), except for the lowest band-gap constituent In0.53Ga0.47As, the sheet resistance can be increased more than five orders of magnitude for He doses above 2.5×1013 cm−2. For the other constituents, the sheet resistance can be made high enough and sufficiently thermally stable to be potentially useful for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341520
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  • 7
    Electronic Resource
    Electronic Resource
    Design of high-performance quantum well electron transfer modulators via self-consistent modeling (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We successfully use a self-consistent physical model to predict device performance in a chopped quantum well electron transfer modulator. Large built-in electric fields for this structure cause delocalization of the electron wave function, requiring a careful evaluation of excitonic effects. Our calculations of both the electrical and electro-optic properties are in remarkably good agreement with the experimental data once Coulomb interactions are properly taken into account. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112964
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  • 8
    Electronic Resource
    Electronic Resource
    Multi-gigahertz-bandwidth intensity modulators using tunable-electron-density multiple quantum well waveguides (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 201-203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first measurement of modulation bandwidth in electron transfer quantum well modulators. A device with 1 pF capacitance provides (approximately-greater-than)10 dB optical modulation depth at 1.537 μm wavelength with a 3 dB electrical bandwidth of 5.7 GHz. Optical pump-probe measurements indicate that the fundamental response time is determined by the voltage-dependent speed of carrier escape from the well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105965
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  • 9
    Electronic Resource
    Electronic Resource
    Beryllium δ doping of GaAs grown by molecular beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1969-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial localization of Be in δ-doped GaAs within few lattice constants (〈20 A(ring)) is achieved at low growth temperatures for concentrations N2DBe 〈1014 cm−2 as indicated by capacitance-voltage profiles and secondary ion mass spectroscopy. At elevated growth temperatures and at higher Be concentrations, significant spreading of the dopants occurs and is explained by (i) Fermi-level pinning-induced segregation, (ii) repulsive Coulomb interaction of dopants, and (iii) diffusion. The highest Be concentration achieved at low growth temperatures exceeds 2×1020 cm−3 and is limited by repulsive dopant interaction. It is shown that the repulsive Coulomb interaction results in a correlated, nonrandom dopant distribution. The diffusion coefficient of Be in GaAs is determined and is found to be much lower than previously reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345576
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  • 10
    Electronic Resource
    Electronic Resource
    Cloning and characterization of a wound-specific hydroxyproline-rich glycoprotein in Phaseolus vulgaris (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 13 (1990), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract. We have isolated a cDNA clone whose corresponding transcript encodes an apoprotein of a hydroxyproline-rich glycoprotein. Both infection of plants with fungal spores and treatment of suspension-cultured bean cells with a fungal elicitor preparation cause a rapid decrease of the level of this mRNA. Wounding of bean tissue, however, leads to a very rapid, transient induction of this transcript. In contrast, all bean hydroxyproline-rich glycoproteins described previously are induced both after infection with fungal spores and after mechanical damage. The protein encoded by this new clone contains a proline-rich domain of about 30 kilodaltons. Most of these proline residues are part of the characteristic peptides Ser-Pro4, Scr-Pro5 and Ser-Pro6, which are often tandemly repeated. These tandem-repeats are not found in any of the other bean hydroxyproline-rich glycoproteins, where almost all of the Ser-Pro4 units are integrated into higher order repetitive units of 16 amino acids. The gene is present at a single or low copy number in the haploid genome and exhibits an unusual codon usage bias for the amino acids proline and serine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.1990.tb01310.x
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