ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Silicon Carbide MESFETs for microwave frequencies were made using a field-platedburied gate approach. The devices were fabricated using passivation oxides with different interfacetrap densities. By using a passivation oxide with a reduced interface trap density, grown in a sodiumcontaining ambient, it was possible to achieve a very high continous wave output power density of thedevice: 8 W/mm at 3 GHz and 1 dB compression
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1103.pdf
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