ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, MgO thin films were prepared by rf magnetron sputtering technique on twodifferent substrates of Si (100) wafers and amorphous glasses. The influence of different depositionconditions such as substrate temperature, Ar pressure, film thicknesses on the crystal structure ofMgO thin films were studied. BaTiO3 ferroelectric thin films were subsequently deposited on theMgO films. The XRD results showed that the orientation of MgO films was dependent greatly on thesubstrate temperature. A highly (100) oriented MgO thin films were obtained at the temperature of800℃. The crystallographic texture has been deteriorated rapidly as the argon pressure decreased to1.0 Pa. It has been also found that the film thickness has a great influence on the film orientation. Highsubstrate temperature, high argon pressure and a certain thickness appear to be favorable forformation of a good texture for the MgO films. The structure and microstructure of the BaTiO3 filmswere various both with deposition conditions and with the crystallographic texture of the MgO. Ahighly (001) oriented ferroelectric BTO film was obtained on the MgO films with an optimizeddeposition conditions
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.546-549.2175.pdf
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